This paper reviews the basic circuit issues of silicon-on-insulator (SOI) technology for metal-oxide-semiconductor (CMOS) circuits. The superior features of SOI in low power, high speed, high device density and the effect of floating body particularly in partial depletion (PD) SOI device are addressed. Analog and RF circuits are considered and their performances are compared with those reported...

Silicon integrated circuit interconnect technology has evolved rapidly, driven by the continual increase in device functional density. This paper reviews past technology developments and highlights current innovations such as the use of copper metallisation and low k dielectrics to overcome device speed limitations. Areas of convergence between silicon and compound semiconductor interconnect te...

In semiconductor spintronics, electron spin rather than charge is the key property. This paper describes several spin-related devices using spin-orbit interaction. We have experimentally confirmed that the spin-orbit interaction in a semiconductor two-dimensional electron gas channel can be controlled by a gate voltage. This is the first step towards the creation of functional spin devices. The...

We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGc HBT using a hydrodynamic transport...

Device modeling of novel semiconductor devices requires adapted physical models which include quantum mechanical effects. The quantum hydrodynamic as well as the quantum drift diffusion model offers effective possibilities for the simulation of nanoscale devices, particularly if tunneling processes appear. The models can be implemented effectively in conventional device simulation systems.

Full-thermodynamic device simulation solves drift-diffusion (DD), energy balance, and lattice self-heating equations simultaneously and the solution time is extensive. An algorithm to reduce the solution time is presented. The method uses a single lattice temperature to describe the self-heating in the whole semiconductor device. It is shown that the solution time is reduced by 20% and little e...

We present the results of an InP HBT device development process. We have developed a new HBT device fabrication approach that represents a major departure from traditional compound semiconductor manufacturing techniques. The new generation of deep submicron InP-based HBTs presented here uses an ion implanted subcollector and offers significantly improved performance, integration, and device rel...

An active device is an electron device, such as a transistor, capable of delivering power amplification by converting dc bias power into time varying signal power. It delivers a greater energy to its load than if the device were absent. The charge control framework [1-3] presents a unified understanding of the operation of all electron devices and simplifies the comparison of the several active...

Semiconductor nanowire field effect transistors have emerged as a promising technology for development of label-free biomolecular sensors for rapid diagnostics. However, their practical application has been hindered due to the significant device-to-device variations in electrical properties and the need for individual sensor calibration. Recent advances in device fabrication and demonstrations ...

Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...