نتایج جستجو برای: semiconductor doping

تعداد نتایج: 76507  

Journal: :Optics express 2009
B S Passmore D G Allen S R Vangala W D Goodhue D Wasserman E A Shaner

Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0 degrees to 35 degrees in 5 degrees steps. A fundamental resonance shift of approximately 123 cm-1 (1.4 mi...

2009
B P Downey S Datta S E Mohney

Reduction in contact size via scaling leads to an increase in parasitic contact resistance, which can be a limiting factor in aggressively scaled high-frequency transistors. Using numerical modelling, we predict that nanoscale topography at the metal/semiconductor interface can reduce the effective specific contact resistance by 25% or more using features 10 nm or less in width, even for doping...

Journal: :Nature communications 2013
Guanghao Lu James Blakesley Scott Himmelberger Patrick Pingel Johannes Frisch Ingo Lieberwirth Ingo Salzmann Martin Oehzelt Riccardo Di Pietro Alberto Salleo Norbert Koch Dieter Neher

Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poo...

2006
Yiming Li Cheng-Kai Chen

In this paper, a distributed simulation-based computational intelligence algorithm for inverse problem of nanoscale semiconductor device is presented. This approach features a simulation-based optimization strategy, and mainly integrates the semiconductor process simulation, semiconductor device simulation, evolutionary strategy, and empirical knowledge on a distributed computing environment. F...

2014
S. Yazdi A. Berg T. Kasama M. Beleggia M. T. Borgström

Semiconductor nanowires (NWs) are very promising building blocks for future electronic and optoelectronic devices. Realizing this, nevertheless, requires overcoming several important challenges, such as control and evaluation of doping levels in NWs. Due to the nanoscale nature of NWs, characterization techniques, such as Hall effect measurements and four-point probes, used conventionally for t...

Journal: :Nanotechnology 2011
Fei Wang Jung-Hun Seo Dylan Bayerl Jian Shi Hongyi Mi Zhenqiang Ma Deyin Zhao Yichen Shuai Weidong Zhou Xudong Wang

An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precurso...

Journal: :Physica E: Low-dimensional Systems and Nanostructures 2014

Journal: :ACS applied materials & interfaces 2015
Deok Yeon Lee Eun-Kyung Kim Nabeen K Shrestha Danil W Boukhvalov Joong Kee Lee Sung-Hwan Han

Despite the highly porous nature with significantly large surface area, metal-organic frameworks (MOFs) can be hardly used in electronic and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study of MOF thin films that require electron transport or conductivity in combination with the everlasting porosity is highly desirable. In the present work, thin f...

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