Design of efficient thin film photovoltaic (PV) cells require optical power absorption to be computed inside a nano-scale structure of photovoltaics, dielectric and plasmonic materials. Calculating power absorption requires Maxwell’s electromagnetic equations which are solved using numerical methods, such as finite difference time domain (FDTD). The computational cost of thin film PV cell desig...

A novel method named as submicron-dot-array (SDA) doping is developed for the fabrication of low-temperature polycrystallinesilicon thin film transistors (TFTs). All electrical parameters are improved by employing SDA structure. It is worth mentioning that the mobility of fabricated device is 4 times of conventional TFTs. The proposed SDA method has great potential for system-onpanel applications.

In this work we present a new polymeric thin film transistor (PTFT), fabrication process where standard photolithographic and dry etching techniques are used to place gate contact on the upper surface of the device, and to access in an easy and reliable way the buried bottom drain and source contacts from the upper surface of the device. This fabrication technique benefits of all the advantages...

We report on an empirically based physical model developed for small-molecule organic thin film transistors (OTFTs). The model is an extension of an adapted MOSFET model for hydrogenated amorphous silicon TFTs accounting for an arbitrary energy distribution of mobile and trap states and allows the extraction of the parameters from the measured device characteristics. Ideally all parameters can ...

Thickness characterization of thin films is of primary importance in a variety of nanotechnology applications, either in the semiconductor industry, quality control in nanofabrication processes or engineering of nanoelectromechanical systems (NEMS) because small thickness variability can strongly compromise the device performance. Here, we present an alternative optical method in bright field m...

Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question...

We show that a chiral (f+if)-wave superconducting pairing may be induced in the lowest heavy hole band of a hole-doped semiconductor thin film through proximity contact with an s-wave superconductor. The chirality of the pairing originates from the 3π Berry phase accumulated for a heavy hole moving along a close path on the Fermi surface. There exist three chiral gapless Majorana edge states, i...

Organic-based flexible dielectric films with high permittivity (e) are desirable for future applications of organic thin-film transistors, such as smartcards and radio frequency identification (RFID) tags, that concurrently desire flexible or conformable substrates. Advances in the development of all-polymer field-effect transistors (PFETs) have been particularly significant for their potential...

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temper...

The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-pr...