The consequences of several microscopic interactions on the photoemission spectra of crystalline organic semiconductors are studied theoretically. It is argued that their relative roles can be disentangled by analyzing both their temperature and their momentum-energy dependence. Our analysis shows that the polaronic thermal band narrowing, which is the foundation of most theories of electrical ...

1. Introduction There is a growing demand for power semiconductors applied to motor drive inverters for electric vehicles (EVs) and hybrid electric vehicles (HEVs). Based on the results of the development and mass production of automotive power semiconductors, which require very high reliability and functionality, Mitsubishi Electric has developed the J-Series Intelligent Power Modules (IPMs) a...

The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green’s function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton densit...

In the presence of a perpendicular weak magnetic field, current filaments in semiconductors can obtain a transverse drift. In the framework of a collective-coordinate ansatz, an expression for the velocity of the filament is derived for a simple type of extrinsic semiconductors. It turns out that the motion is caused by the coupling of the non-uniform Hall angle to the translational Goldstone m...

We investigate the spin-Hall effect of both electrons and holes in semiconductors using the Kubo formula in the correct zero-frequency limit taking into account the finite momentum relaxation time of carriers in real semiconductors. This approach allows us to analyze the range of validity of recent theoretical findings. In particular, the spin-Hall conductivity vanishes for vanishing spin-orbit...

Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of absorption in porous and microcrystalline semiconductors. The effect is more pronounced at a rough boundary due to enlargement of the share of the interface atoms. T...