In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep ...

has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...

objective(s) four novel losartan analogues 5a-d were synthesized by connecting a dihydropyridine nucleus to imidazole ring. the effects of 5a and 5b on angiotensin receptors (at') and l-type calcium channels were investigated on isolated rat aorta. materials and methods aortic rings were pre-contracted with 1 pm angiotensin ii or 80 mm kcl and relaxant effects of losartan, nifedipine, 5a a...

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

We discuss the key important regimes of electromagnetic field interaction with charged particles. Main attention is paid to the nonlinear Thomson/Compton scattering regime with the radiation friction and quantum electrodynamics effects taken into account. This process opens a channel of high efficiency electromagnetic energy conversion into hard electromagnetic radiation in the form of ultra sh...

In the past decades the minimum transistor size has been down-scaled according to Moore’s law. However, scaling of conventional MOSFET devices is limited due to short channel effects, gate insulator tunneling and limited control of doping concentrations. FinFETs are the most promising device structures in order to overcome these negative effects. The gate in a FinFET is wrapped around a thin si...

This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to potential barrier channel region, manifest themselves as threshold voltage roll-off, drain-induced lowering, and subthreshold swing degradation. Furthermore, effect of non-linear injection due work-function mismatch bet...

Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects. key words: MOSFET, extension, gate, overlap, tilt implantation...

In this paper, variability analysis of a graded-channel dual-material (GCDM) double-gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed using Sentaurus TCAD. By varying the different device parameters, proposed GCDM-DG s-Si respect to variations in threshold voltage, drain current, and short-channel effects as line edge roughness fluctuations random dopant, contact resistanc...