InAs-based heterostructure barrier varactor (HBV) diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current–voltage and capacitance–voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thicknesses are examined. Maximum capacitance values and maximum-to-minimum capacitance ratios greater than those predicted by traditional HBV models were ...

The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...

In this paper, the impact of anode contact in SBDs, PiN, JBS and MPS diodes is analyzed through TCAD simulations. The focus investigation correct simulation Schottky barrier height on different areas device to correctly simulate a or structure. It found that splitting an accurate selection pzone necessary allow onset bipolar conduction devices. way, it possible analyze behavior diode, including...