These formulas hold for any topological group-system 2, any subsystem Si of 2 , and the difference-system S —Si. (W. Mayer, Topologische Gruppensysterne, Monatshefte für Mathematik und Physik, vol. 47 (1938); henceforth referred to as M, TG.) Here 5<(S) denotes the i-dimensional Betti group of S, while ^»(Si) and 5t-(S —Si) are these groups for Si and S —Si respectively. The symbol r( ), of cou...

The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calcu...

xi=x̄i when ‖∇xif(x̄)‖2 ≤ λBi, it follows that x̄i = x̄i if and only if ‖∇xif(x̄)‖2 ≤ λBi. Hence, hi(x̄ ∗ i ) = 0. Case 2: Suppose that i ∈ Ic := N \ I, i.e., ‖∇xif(x̄)‖2 > λBi. In this case, x̄i 6= x̄i. From the first-order optimality condition, we have ∇xif(x̄) + Li(x̄i − x̄i) + λBi x̄ ∗ i −x̄i ‖x̄i −x̄i‖2 = 0. Let si := x̄∗i −x̄i ‖x̄i −x̄i‖2 and ti := ‖x̄i − x̄i‖2, then si = −∇xif(x̄) Liti+λBi . Since ‖si‖2 = 1, i...

X-ray standing wave (XSW) analysis was used for an atomic-scale structural study of ultra-thin Si/Ge heterostructures grown on Si(0 0 1) by surfactant mediated epitaxy with Bi as the surfactant. XSW measurements were performed for the Si(0 0 4) and Si(0 2 2) Bragg reflections for Ge coverages from 1 to 10 monolayers. The measured Ge coherent positions agree with the calculated Ge positions for ...

background: piper guineense (pg) and sesamum indicum (si) have been shown to be rich sources of antioxidants and other health benefits; hence, we evaluated the impact of its consumption in hypercholesterolemic model on lipid metabolism. methods: forty-eight animals were divided into eight groups of six rats each. rats were given cholesterol (40 mg/0.3ml), pg and si extract (100 and 200 mg/kg), ...

Introduction As a new class of an ultra-high capacity anode material for Li-ion batteries, nano-Si/carbon composites have a considerable potential [1, 2]. In such composites, nano-Si can store lithium faster than bulk Si, and the carbon matrix serves nano-Si with an electrical path to compensate the poor electrical conductivity of Si. Though Si has an extremely high theoretical capacitance up t...

Reported is the first rational synthesis of a trisubstituted deltahedral Zintl ion, [Ge(9){Si(SiMe(3))(3)}(3)](-) in this case, by the addition of the three substituents in a reaction of the parent naked deltahedral Zintl ion Ge(9)(4-) with {(Me(3)Si)(3)Si}Cl. The new species were crystallized and structurally characterized in [K(2,2,2-crypt)](2)[Ge(9){Si(SiMe(3))(3)}(3)] (monoclinic, P2(1)/c, ...

Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83-99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155 °C and then single-step weight losses between 200 and 275 °C. The nonvolati...

Palladium (Pd) generally prefers low oxidation states. So far, no stable Pd compound with a +5 oxidation state is known. Here, we report two multinuclear Pd compounds containing Pd centers ligated by five silicon (Si) atoms. A thermal condensation reaction of [{1,2-C(6)H(4)(SiMe(2))(SiH(2))}Pd(II)(Me(2)PCH(2)CH(2)PMe(2))] (Me = methyl) afforded two stereoisomers of dinuclear Pd(II) compounds an...

Active doping of B was observed in nanometer silicon layers confined in SiO(2) layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of [SiO(2) (8 nm)/B-doped Si(10 nm)](5) films turned out to be segregated into the Si/SiO(2) interfaces and the Si bulk, forming a di...