The article deals with the effect of irradiation Si+ ions on phase transformations in Ti–Al system during thermal annealing. An aluminum film a thickness 500 nm was deposited VT1-00 titanium samples by magnetron sputtering, followed ion implantation. Samples before and after Si were annealed vacuum 10?4 Pa temperature range 600–1000 °C. It established that implantation reduces dissolution Al ?-...

Metallization of silicon solar cells using electroplating is of interest recently as a cheaper replacement of silver screen printing. Light assisted electroplating of Nickel-Cobalt (NiCo) alloys were studied on crystalline silicon (Si) solar cells in this paper. The effect of illumination was investigated in conjunction with the light absorption properties of the plating solution, emission spec...

The influence of starting surface topography on the nucleation and growth of epitaxial silicide layers was investigated. CoSi2 layers were grown via the template technique on one-dimensionally patterned Si~100! substrates. These substrates contained mesa stripes, running parallel to Si@011#, and exhibited either a number of Si $hkl% facets, or ‘‘smoothly varying’’ sinusoidal profiles. Conventio...

We have carried out a detailed study of the chemical bonding for two room-temperature stable platinum silicide phases, tetragonal a-Pt2Si and orthorhombic PtSi. An analysis of the valence electronic charge density reveals surprising evidence of covalent three-center bonds in both silicide phases, as well as two-dimensional metallic sheets in a-Pt2Si. These elements of the bonding are further an...

At the nanoscale, defects can significantly impact phase transformation processes and change materials properties. The material nickel silicide has been the industry standard electrical contact of silicon microelectronics for decades and is a rich platform for scientific innovation at the conjunction of materials and electronics. Its formation in nanoscale silicon devices that employ high level...