Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addresses liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1 s) shows a clear dependence on the channel lengt...

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films...

A facile method for the preparation of thin-film carbon electrodes by electron beam evaporation onto highly doped silicon is presented. The physical and electrochemical properties of these films both before and after postdeposition pyrolysis are investigated. Raman spectroscopy establishes the amorphous structure of the nonpyrolyzed carbon films and confirms the formation of graphitic carbon af...

In the past several years, the thin film transistor technology has progressed intensely, especially in the low temperature, large-area, high throughput fabrication process. Recently, various thin film transistors (TFT) technological sources have been realized, indicating that new information appliances that match new information infrastructures and lifestyles will be available in the future. In...

Fabrication of thin-film solar cells (TFSCs) on substrates other than Si and glass has been challenging because these nonconventional substrates are not suitable for the current TFSC fabrication processes due to poor surface flatness and low tolerance to high temperature and chemical processing. Here, we report a new peel-and-stick process that circumvents these fabrication challenges by peelin...

Title of Thesis : Properties of sputtered a-Ge and a-Ge:H thin films Hanjin Cho, Master of Science in Electrical Engineering , 1987 Thesis directed by : Dr. Kenneth S. Sohn. The effect of the amorphous and glassy structure of amorphous germanium films on their electrical characteristics was investigated experimentally. The films were deposited onto silicon substrates using a modified MRC 8800 t...

In digital X-ray sensors, pixel complexity is limited by the instabilities of amorphous silicon transistors or by the lack of homogeneity of their polycrystalline silicon counterparts. Here, we present a novel approach to the fabrication of thin-film transistors, based on the use of silicon nanowires grown in porous alumina templates. Transistors made from silicon nanowires are essentially stud...

This article explores, through experiments and finite element analysis, the ability to plastically deform thin-film semiconductor structures on deformable substrates to spherical cap shapes without cracking the semiconductor layers. The major challenge involves contending with the large strain due to extreme deformation that will crack uniform stiff layers, such as silicon or silicon nitride. B...

Wave guidance is an important aspect of light trapping in thin film photovoltaics making it important to properly model the effects of loss on the field profiles. This paper derives the full-field solution for electromagnetic wave propagation in a symmetric dielectric slab with finite absorption. The functional form of the eigenvalue equation is identical to the lossless case except the propaga...