We report local spectra of the near-field thermal emission recorded by a Fourier transform infrared spectrometer, using a tungsten tip as a local scatterer coupling the near-field thermal emission to the far field. Spectra recorded on silicon carbide and silicon dioxide exhibit temporal coherence due to thermally excited surface waves. Finally, we evaluate the ability of this spectroscopy to pr...

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the...

The main objective of the present paper is to report on the concentration of silicon carbide (SiC) fibres, crystalline silica and respirable dust in a Canadian SiC production plant and to compare the results with earlier investigations. The second objective is to tentatively explain the differences in concentration of the fibrogenic substances between different countries. The assessment of SiC ...

An experimental technique to characterize irradiation-induced swelling, or isotropic volume expansion, through a combined utilization of medium-to-high energy accelerators and interferometric surface profilometry, was established. The technique was successfully applied to a characterization of swelling behavior in beta-silicon carbide arising from the accumulation of point defects at relatively...

The role of engineering materials in the development of modern technology need not be emphasized. As the levels of technology have become more and more sophisticated, the materials used also have to be correspondingly made more efficient and effective. The increasing use of Aluminium alloy materials in structural and space applications generated considerable interest for the development of tech...

We present a study of the infrared reflectance of porous silicon carbide (PSC) formed by the electrochemical dissolution of silicon carbide substrates of both 6H and 4H polytypes. The reflectance from n-PSC, both as-anodized and passivated, is reported for the first time. The passivation of PSC has been accomplished using a short thermal oxidation. Fourier transform infrared (FTIR) reflectance ...

Microstructures of oxide scales thermally formed on single-crystal silicon carbide were investigated using transmission electron microscopy. The oxide scales were formed on the Si-face of 6H-SiC at 1273-1473 K in dry oxygen. Spherical patterns were observed on the surfaces of the oxidized samples by an optical microscope in some regions. In these regions, cross-sectional transmission electron m...