نتایج جستجو برای: silicon on insulator soi
تعداد نتایج: 8455680 فیلتر نتایج به سال:
−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...
We demonstrate a new technique for high resolution imaging of near field profiles in highly confining photonic structures. This technique, Transmission-based Near-field Scanning Optical Microscopy (TraNSOM), measures changes in transmission through a waveguide resulting from near field perturbation by a scanning metallic probe. Using this technique we compare different mode polarizations and me...
This paper presents an approach to wireless power delivery and subsequent power management for low-power batteryless sensors. Broadband multifrequency rectenna arrays which independently receive and rectify two orthogonal wave polarizations provide DC power with decreased variations in a multipath environment. The DC power extracted from 2-18GHz electromagnetic radiation is managed by high effi...
New lateral metal-contact micromachined switch using high aspect ratio cantilever beam with quasi-finite ground coplanar waveguide (FGCPW) configuration is proposed. It is fabricated by deep reactive ion etching (DRIE) process of silicon-on-insulator (SOI) wafer and shadow mask technology. It has demonstrated the switch operation up to 25 GHz. The insertion loss is less than 0.2 dB and isolatio...
A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 mm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed goo...
Mode-division multiplexing (MDM) is an emerging multiple-input multiple-output method, utilizing multimode waveguides to increase channel numbers. In the past, silicon-on-insulator (SOI) devices have been primarily focused on single-mode waveguides. We present the design and fabrication of a two-mode SOI ring resonator for MDM systems. By optimizing the device parameters, we have ensured that e...
In recent years there has been a growing interest in using Silicon on Insulator (SOI) as a platform for integrated planar optical circuits [] , this is mainly due to the high quality yield volume processes demonstrated by the CMOS manufacturing industry and recent MEMS technology progress[]. In this work we present monolithic integration of Silicon and SiON planar lightwave circuits on a single...
The design of a sensing channel for implantable cardiac pacemakers in CMOS on Silicon-on-Insulator (SOI) technology is presented. The total current consumption is lowered to only 110nA thanks to the optimization at the architectural level, the application of a new class AB design approach at the operational transconductance amplifier (OTA) and the exploitation of the improved characteristics of...
This paper presents a fast statistical static timing and leakage power analysis in Partially-Depleted Silicon-On-Insulator (PD-SOI) CMOS circuits in BSIMSOI3.2 100 nm technology. The proposed timing analysis considers floating body effect on the propagation delay for more accurate timing analysis in PD-SOI CMOS circuits. The accuracy of modeling the leakage power in PD-SOI CMOS circuits is impr...
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