Au/Ag bilayered metal mesh with arrays of nanoholes were devised as a catalyst for metal-assisted chemical etching of silicon. The present metal catalyst allows us not only to overcome drawbacks involved in conventional Ag-based etching processes, but also to fabricate extended arrays of silicon nanowires (SiNWs) with controlled dimension and density. We demonstrate that SiNWs with different mo...

We present a method for quantitative measurement of electrical conductivity of semiconductor wafers in a contactless fashion by using millimeter waves. A focusing sensor was developed to focus a 110 GHz millimeter wave beam on the surface of a silicon wafer. The amplitude and the phase of the reflection coefficient of the millimeter wave signal were measured by which electrical conductivity of ...

Biocompatible-sensing materials hold an important role in biomedical applications where there is a need to translate biological responses into electrical signals. Increasing the biocompatibility of these sensing devices generally causes a reduction in the overall conductivity due to the processing techniques. Silicon is becoming a more feasible and available option for use in these applications...

We report the fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers. Owing to the small sidewall surface roughness achieved by processing on a standard 200mm CMOS fabrication line, minimal propagation losses of 3.6+/-0.1dB/cm for the TE polarization were measured at the telecom...

The traditional manual counting wafers leaded to the silicon wafer cracked by operating frequently. Instead of the manual work, this paper proposed a system to counting wafers based on Machine Vision theory and Image Processing algorithm. We designed a counter system and adopted infrared led as parallel illumination source. In image pre-processing, this paper presented a series of algorithms, w...

Silicon-on-insulator (SOI) wafers are nowadays being prominently used for the manufacture of new generation semiconductor devices. In order to maximize the device yield, the device industry is seeking SOI wafers that meet very stringent wafer specifications such as very low wafer bow and warp. An SOI wafer can undergo severe process-induced stresses during its manufacture leading to significant...

Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...

In this work, the effect of ?-irradiation on adhesion properties FP9120 diazoquinone–novolac photoresist films deposited single-crystal silicon wafers by centrifugation was studied using an indentation method. It found that led to a decrease in specific peeling energy G silicon. case, IR spectra exhibited intensity vibration bands due Si–O–C moiety, which is responsible for silicon, course ?-ir...

Zinc oxide films have been formed from thermally evaporated zinc films on polished and textured silicon wafers after heat treatment at temperatures between 400-900°C for 10min in oxygen ambient. These ZnO films show crystalline structure and the values of their refractive index are found to increase slightly from 1.85 for films annealed at 400°C to 2.05 for the films annealed at 900°C. The film...

The effect of roughness on the dewetting behavior of polyethylene thin films on silicon dioxide substrates is presented. Smooth and rough silicon dioxide substrates of 0.3 and 3.2-3.9 nm root-mean-square roughness were prepared by thermal oxidation of silicon wafers and plasma-enhanced chemical vapor deposition on silicon wafers, respectively. Polymer thin films of approximately 80 nm thickness...