In this study, the effect of tensile test temperature (148 to 673 K) on the microstructural evolutions and the mechanical properties of high manganese twinning induced plasticity (TWIP) steel with the chemical composition of Fe- 31Mn-3Al-3Si (wt. %) was investigated. XRD, SEM and TEM were used to study the microstructural evolutions. Stacking fault energy (SFE) of the alloy was also calculated ...

Organic/inorganic interfaces play a crucial role in organic electronic devices such as organic field effect transistors (OFETs), organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs). The properties of organic thin-film transistors depend on the transport of charges induced at the semiconductor/gate insulator interface. Structural defects near this interface influence the charg...

We have employed the semidiscrete variational generalized Peierls-Nabarro model to study the dislocation properties of aluminum. The generalized-stacking-fault ~GSF! energy surface entering the model is calculated by using first-principles density functional theory ~DFT! and the embedded-atom method ~EAM!. Various core properties, including the core width, dissociation behavior, energetics, and...

We have employed the semidiscrete variational generalized Peierls-Nabarro model to study the dislocation core properties of aluminum. The generalized stacking fault energy surfaces entering the model are calculated by using first-principles Density Functional Theory (DFT) with pseudopotentials and the embedded atom method (EAM). Various core properties, including the core width, splitting behav...

By the virtue of the nature of the vapor-liquid-solid (VLS) growth process in semiconductor nanowires (NWs) and their small size, the nucleation, propagation, and termination of stacking defects in NWs are dramatically different from that in thin films. We demonstrate germanium-silicon axial NW heterostructure growth by the VLS method with 100% composition modulation and use these structures as...

Stacking fault tetrahedra (SFTs) are ubiquitous defects in face-centered cubic metals. They are produced during cold work plastic deformation, quenching experiments or under irradiation. From a dislocation point of view, the SFTs are comprised of a set of stair-rod dislocations at the (110) edges of a tetrahedron bounding triangular stacking faults. These defects are extremely stable, increasin...

Stacking faults are known as defective structures in crystalline materials that typically lower the structural quality of the material. Here, we show that a particular type of defect, that is, stacking fault tetrahedra (SFTs), exhibits pronounced quantized electronic behaviour, revealing a potential synthetic route to decoupled nanoparticles in metal films. We report on the electronic propertie...

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanow...

background and objectives: making stacking gels for polyacrylamide gels in the laboratory by conventional methods is laborious and time consuming. considering the role of temperature in polyacrylamide gels with respect to electrical resistance and viscosity, we assumed that decreasing the temperature would cause an increase in electrical resistance and viscosity.  ultimately, a downward tempera...