In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though...

Activity-dependent plasticity as a result of reorganization of neural circuits is a fundamental characteristic of the central nervous system that occurs simultaneously in multiple sites. In this study, we established the effects of subthreshold transcranial magnetic stimulation (TMS) over the primary motor cortex region on the tibialis anterior (TA) long-latency flexion reflex. Neurophysiologic...

In this Letter, we experimentally investigate the impact of gate geometry on forward operation Schottky-gate p-GaN high electron mobility transistors (HEMTs). particular, analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure in linear regime. These exhibit unique threshold voltage subthreshold swing scaling dependence that is contrast classic field-eff...

Aggressive voltage scaling to 1 V and below through technology, circuit, and architecture optimization is the key to low-power design. Threshold voltage scaling enables aggressive supply scaling but increases leakage power. Technology and circuit trends to control idle leakage power are presented including MTCMOS, variable VT bulk-CMOS, and variable VT Sol . Power can also be reduced by adaptiv...

With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However, a contradiction between achieving low voltage operation and having stable performance severely ...

With scaling of CMOS technology, data stability of SRAM at ultra-low supply voltage has become a critical issue for embedded wearable computing applications. In this work, we suggest an advanced 8T SRAM cell which can operate properly in subthreshold voltage regime. The cell utilizes a differential swing in the read and write path, and allows an efficient column-interleaving structure. In the r...

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current due to influences of processes variations becomes a serious problem. Random dopant fluctuation is one of the problems. In this work, we numerically examine the fluctuation effects of r...

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where th...

A tunneling field effect transistor (TFET) attracts attention, because TFET circuits can achieve better energy efficiency than conventional MOSFET circuits. Although design issues in ultra low voltage logic circuits, such as the minimum operatable voltage (V DDmin), have been investigated for MOSFET's, V DDmin for TFET's have not been discussed. In this paper, V DDmin of TFET logic circuits is ...

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen’s transfer Hamiltonian, and including ...