نتایج جستجو برای: thermal chemical vapor deposition tcvd
تعداد نتایج: 673962 فیلتر نتایج به سال:
The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial ...
Microstructures of well-aligned multiwall carbon nanotubes grown on patterned nickel nanodots and uniform thin films by plasma-enhanced chemical vapor deposition have been studied by electron microscopy. It was found that growth of carbon nanotubes on patterned nickel nanodots and uniform thin films is different. During growth of carbon nanotubes, a nickel particle sits at the tip of each nanot...
Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition
Introduction Silicon oxynitride is a flexible material for use as planar optical waveguides because by changing the composition ( O N ratio) the refractive index can be tuned from 1.46 to 2.0'. Several methods can be used for deposition: PECVD, LPCVD and sputtering. The advantages of PECVD are easy control of composition, high deposition rate and low stress. A disadvantage is the high hydrogen ...
For the first time, patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 C using MgO, Ni, or Fe as the catalysts, and an Al2O3 diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption ∼6.0 eV is detected, without significant sub-band absorption centers. Elect...
A comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of a-Si:H is presented, with special emphasis on the effects of hydrogen dilution. Growth rates at comparable plasma power, for substrate temperatures between 100°C and 300°C and for various H2 dilution ratios are presented, along with optical bandgap, H content, and el...
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We present preliminary results on a microfabrication approach to enable the integration of high yield, uniform, and preferential growth of vertically aligned carbon nanotubes ~VACNTs! on low-stress micromechanical structures using a combination of ‘‘electron-beam crosslinked’’ poly~methylmethacrylate! surface nanomachining and direct current plasma enhanced chemical vapor deposition of electric...
In this paper, multi-walled carbon nanotubes are synthesized by arcdischarge and chemical vapor decomposition methods. Multi-walled carbon nanotubes are synthesized on thin film of nickel sputtered on silicon substrate by thermal chemical vapor deposition of acetylene at a temperature of 750°C. The flow of current in arc-discharge method varies in the range 50–200 A. Further arcsynthesized carb...
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