We propose and demonstrate a purely electrical method for measuring the effective temperature T, of majority carriers under the injection of hot minority carriers. The T, of holes in a thin p-type InGaAs layer, heated by electron injection from an InAlAs layer in a three-terminal lattice-matched heterostructure, was determined by measuring the thermionic emission current of holes over another s...

We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge0:9983C0:0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10 5 cm2 to as low as 5:6 10 6 cm2. Theoretical calculations of the contact resistance of metals on ...

This work sununanzes recent data on minority carrier lifetime in nand p-type double heterostructures (DHs) of 0.5-0.6 eV GalnAsSb confined with GaSb and AIGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination i...

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

Using a metal-semiconductor-metal back-to-back Schottky contacted ZnO microwire device, we have demonstrated the piezoelectric effect on the output of a photocell. An externally applied strain produces a piezopotential in the microwire, which tunes the effective height of the Schottky barrier (SB) at the local contact, consequently changing the transport characteristics of the device. An equiva...

1. The common-base emitter current In hot-electron transistors, the emitter/base junction should allow the injection of electrons into the graphene base. The emitter current is the source of all the electrons injected into the graphene base and it consists of two components: one component is due to Fowler-Nordheim tunneling, and the other component is due to thermionic emission (e.g. the curren...