A programmable high-frequency operational transconductance amplifier (OTA) is proposed and analyzed. A general configurable analog block (CAB) is presented, which consists of the proposed programmable OTA, programmable capacitor and MOSFET switches. Using the CABs, the universal tunable and field programmable analog array (FPAA) can be constructed, which can realize many signal-processing funct...

This paper describes the Q enhancement of inductor or resonance circuit based on the controlled CMOS transonductance, which is applicable to either on-chip inductor or off-chip inductor. The proposed circuit configuration of high Q enhancement is evaluated for the RF transmit filter of a LTE mobile comm’s micro base station, with the Q factor of over 3000 and the capacity of 10W. A tunable filt...

In this work, we have demonstrated that the local deformation at the crossed carbon nanotube (CNT) junctions can introduce significant tunable local gate effect under ambient environment. Atomic force microscope (AFM) manipulation of the local deformation yielded a variation in transconductance that was retained after removing the AFM tip. Application of a large source-drain voltage and pressin...

This paper focuses on the impact of variation in thickness oxide (SiO2) layer performance parameters a FinFET analysed by varying range 0.8nm to 3nm. While thickness, overall width is fixed at value 30nm, and are for structures with different thickness. The like drain current, transconductance, transconductance generation factor, parasitic capacitances, output conductance, cut-off frequency, ma...

We describe the analog CMOS VLSI implementation of a cellular neural network (CNN) architecture which spatially filters a 2D image by two orientation selective image filters. The image is represented by a set of input currents supplied by an on-chip array of photosensors. The filters are similar to even and odd Gabor filters. The CNN architecture is implemented using two resistive networks coup...

A novel method that reveals the spatial distribution of border traps in III-V MOSFETs is presented. The increase in transconductance with frequency is explored in a very wide frequency range (1Hz to 70 GHz) and a distributed RC network is used to model the oxide and trap capacitances. An evaluation of vertical InAs nanowire MOSFETs and surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-κ gate ...

In this paper, feed-forward techniques are revised and used for the design of high-frequency Operational Transconductance Amplifiers (OTA). For the same power consumption and similar transistor dimensions the two-path and three-path folded-cascode OTAs present both smaller settling error and faster response as compared with the typical folded-cascode topology. Also, a No-Capacitor FeedForward (...

We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 5–6 nm of vertical channel depth was formed by grading the channel region linearly from GaN to Al0.15Ga0.85 N over 50 Å. ...

This article presents a 3rd current-mode quadrature oscillator using current controlled current conveyor transconductance amplifier (CCCCTA) and operational transconductance amplifier (OTA) as active element as active elements. The proposed circuit is realized from a noninverting lossless integrator and an inverting second order low-pass filter. The oscillation condition and oscillation frequen...

In this paper, an ultra low-voltage, ultra lowpower voltage differencing transconductance amplifier (VDTA) is proposed. DTMOS (Dynamic Threshold Voltage MOS) transistors are employed in the design to effectively use the ultra low supply voltage. The proposed VDTA is composed of two operational transconductance amplifiers operating in the subthreshold region. Using TSMC 0.18μm process technology...