نتایج جستجو برای: tunnel fet tfet
تعداد نتایج: 38497 فیلتر نتایج به سال:
Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias behaves like transistor due tunnelling mechanism the charge carriers across barrier called band-to-band (BTBT). fac...
BACKGROUND Among patients with obstructive lung disease, the correlation between clinical improvement and bronchodilator response is poor. Forced expiratory time (FET) may explain some discrepancy, but FET has received little attention. METHODS We analyzed change in FET during the 3 initial satisfactory flow-volume loops in 102 consecutive patients, 37 with normal spirometry and 65 with airfl...
Performance investigation of asymmetric double‐gate doping less tunnel FET with Si/Ge heterojunction
Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneli...
Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...
This paper describes the fabrication, and structural and electrical characterization of a new, aerosolnanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosolnanocrystal NVM device features prograderase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>lo5 P/E cycles), and long-term non-volatility in spite of a thin bo...
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