نتایج جستجو برای: tunneling effect

تعداد نتایج: 1660038  

2008
S. A. Trugman

We study an electron that interacts with phonons or other linear or nonlinear excitations as it resonantly tunnels. The method we use is based on mapping a many-body problem in a large variational space exactly onto a onebody problem. The method is conceptually simpler than previous Green’s function approaches, and allows the essentially exact numerical solution of much more general problems. W...

1990
Xuan Ni Liang Huang Ying-Cheng Lai Louis M. Pecora

We solve the Dirac equation in two spatial dimensions in the setting of resonant tunneling, where the system consists of two symmetric cavities connected by a finite potential barrier. The shape of the cavities can be chosen to yield both regular and chaotic dynamics in the classical limit. We find that certain pointer states about classical periodic orbits can exist, which suppress quantum tun...

Journal: :Physical chemistry chemical physics : PCCP 2015
Chih-Chieh Chen Yia-chung Chang David M T Kuo

We study the charge transport properties of triangular quantum dot molecules (TQDMs) connected to metallic electrodes, taking into account all correlation functions and relevant charging states. The quantum interference (QI) effect of TQDMs resulting from electron coherent tunneling between quantum dots is revealed and well interpreted by the long distance coherent tunneling mechanism. The spec...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

2002
G. G. Cabrera

In 1975, Julliere proposed a simple model for tunneling between two ferromagnetic metals, assuming that the spin is conserved in the tunneling process and that the tunneling current is proportional to the density of states of each spin at the ferromagnetic electrodes. A magnetoresistance ~MR! effect then appears when one compares the resistance for cases in which the magnetization of the electr...

2016
Parisa Zareapour Jianwei Xu Shu Yang F. Zhao Achint Jain Zhijun Xu T. S. Liu

Recently there has been reinvigorated interest in the superconducting proximity effect, driven by predictions of the emergence of Majorana fermions. To help guide this search, we have developed a phenomenological model for the tunneling spectra in anisotropic superconductor-normal metal proximity devices. We combine successful approaches used in s-wave proximity and standard d-wave tunneling to...

2014
Ephriem Tadesse Mengesha Jerzy Sepioł

Supersonic jet-isolated porphycene (Pc) and its isotopomers have been studied using the techniques of laser induced fluorescence (LIF) excitation, single vibronic level fluorescence (SVLF) and hole burning spectroscopy, combined with quantum mechanical calculation of geometry and vibrational structures of the ground (S0) and lowest electronically excited (S1) states. Porphycene is a model for c...

2008
Guangqi Li Michael Schreiber Ulrich Kleinekathöfer

The electron tunneling through a molecular junction modeled by a single site weakly coupled to two leads is studied in the presence of a time-dependent external field using a master equation approach. In the case of small bias voltages and high carrier frequencies of the external field, we observe the phenomenon of coherent destruction of tunneling, i.e. the current through the molecular juncti...

2014
Mingda Li David Esseni Gregory Snider Debdeep Jena Huili Grace Xing

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen’s transfer Hamiltonian, and including ...

2013
Arpan Deyasi Gourab Kumar Ghosh

-Transmission coefficient, eigen states and tunneling current density of a potentially symmetric quantum double barrier structure has been numerically computed using transfer matrix technique for qualitative analysis of resonant tunneling probability when realistic band structure of higher band gap material is taken into account. GaAs/AlxGa1-xAs material composition is taken as an example for c...

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