A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN struc...

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si12xGex and Si/Si12x2yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si12xGex heterostructures and conduction-band and valence-band offsets in Si/Si12x2yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured...

In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (...

Bismuth oxide may be a promising battery material due to the high gravimetric (690 mAh g(-1)) and volumetric capacities (6280 mAh cm(-3)). However, this intrinsic merit has been compromised by insufficient Li-storage performance due to poor conductivity and structural integrity. Herein, we engineer a heterostructure composed of bismuth oxide (Bi2O3) and bismuth sulphide (Bi2S3) through sulfuriz...

We designed and successfully fabricated a ZnS/CdS 3D mesoporous heterostructure with a mediating Zn1 xCdxS interface that serves as a charge carrier transport channel for the first time. The H2production rate and the stability of the heterostructure involving two sulfides were dramatically and simultaneously improved by the careful modification of the interface state via a simple post-annealing...

We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations i...

We present a study of the surface reactivity of a Pd/Bi2Te3 thin film heterostructure. The topological surface states from Bi2Te3, being delocalized and robust owing to their topological natures, were found to act as an effective electron bath that significantly enhances the surface reactivity of palladium in the presence of two oxidizing agents, oxygen and tellurium respectively, which is cons...

Spin-polarized electron photoemission has been investigated for strained III-V compounds; 1) strained In,Ga I-~As epitaxially grown on a GaAs substrate, and 2) strained GaAs grown on a GaAsl-,P, buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed. Polarized electron sources have wide a...

Synthesis of ZnO-Ag heterostructure nanoparticles was carried out by a precipitation method with cellulose nanocrystals (CNCs) as a stabilizer for antimicrobial and thermal studies. ZnO-Ag nanoparticles were obtained from various weight percentages of added AgNO₃ relative to Zn precursors for evaluating the best composition with enhanced functional properties. The ZnO-Ag/CNCs samples were chara...

<p>We consider possibility to increase field-effect transistor's density in a switched-capacitor step-down DC-DC converter. Based on this approach we analyzed manufacturing of the converter heterostructure with special structure. Some specific sections must be doped by ion implantation or diffusion. After procedure optimized annealing has been done. We also obtained conditions for decreas...