نتایج جستجو برای: type ii heterostructure

تعداد نتایج: 1799788  

Journal: :Nanoscale 2015
Zhesheng Chen Johan Biscaras Abhay Shukla

We fabricated a graphene/few-layer InSe heterostructure photo-detector and solved a recurrent materials problem concerning degradation of ultra-thin atomic layers in air. This heterostructure has a largely enhanced performance explained by its fundamentally different mode of functioning with respect to the corresponding device without graphene.

Journal: :Small science 2023

Photocatalytic Syngas Production In article number 2200085, Mingxiong Lin, Zanyong Zhuang, Yan Yu, and co-workers report the construction of an ordered CoIII[email protected]II-MOF heterostructure based on a spontaneous oriented attachment mechanism. CoIII-PBA exerts stronger affinity for CO2 molecules than CoII-PBA, thus serves as active sites, built-in electric field in protected]II-PBA heter...

Journal: :تحقیقات نظام سلامت 0
آذر طل دکتری تخصصی، گروه آموزش بهداشت و ارتقای سلامت، دانشکده بهداشت، دانشگاه علوم پزشکی تهران، تهران، ایران فرشته مجلسی استاد، گروه آموزش بهداشت و ارتقای سلامت، دانشکده بهداشت، دانشگاه علوم پزشکی تهران، تهران، ایران عباس رحیمی فروشانی دانشیار، گروه آمار و اپیدمیولوژی، دانشکده بهداشت، دانشگاه علوم پزشکی تهران، تهران، ایران داود شجاعی زاده استاد، گروه آموزش بهداشت و ارتقای سلامت، دانشکده بهداشت، دانشگاه علوم پزشکی تهران، تهران، ایران بهرام محبی استادیار، گروه قلب و عروق، دانشکده پزشکی، دانشگاه علوم پزشکی تهران، تهران ، ایران

background: psychological and behavioral domains are important in coping with type ii diabetes. this study was conducted to assess supportive and coping obstacles in living with type ii diabetes among patients who visited hospitals affiliated to tehran university of medical sciences (tums). methods: this was a cross-sectional study with 600 subjects who participated in the study. data collectio...

2017
Guangyuan Lu Tianru Wu Peng Yang Yingchao Yang Zehua Jin Weibing Chen Shuai Jia Haomin Wang Guanhua Zhang Julong Sun Pulickel M. Ajayan Jun Lou Xiaoming Xie Mianheng Jiang

Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nick...

Journal: :Chemical communications 2018
Xin Liu Huichang Li Yongju Kim Myongsoo Lee

We report the pH-driven formation of a dynamic 2-D porous heterostructure through assembly-disassembly switching of the stacked macrocycles of nanotubules and their subsequent spreading on the surfaces of a self-sorted sheet assembly in a hierarchical co-assembly. The 2-D ordered porous heterostructure is able to discriminate spherical C60 from flat coronene through shape selective adsorption.

Journal: :Chemical communications 2013
Meichen Guo Liping Li Haifeng Lin Ying Zuo Xinsong Huang Guangshe Li

A novel heterostructure was first synthesized by directly depositing photocatalytic inert ZnO2 onto facet {201} of brookite nanorods. The heterostructure thus obtained was found to show a superior photocatalytic activity under UV-light irradiation. The exceptional photocatalytic performance was due to the band-structure match between ZnO2 and brookite as well as synergic charge accumulation by ...

2014
E. L. Pankratov

Framework this paper we discussed an approach to manufacture a multiemitter heterotransistor. The introduced approach is a branch of recently introduced approach and based on doping by diffusion or by ion implantation of required part of heterostructure and optimization of dopant and/or radiation defects. The heterostructure should has special configuration.

2014
M. Tanzid M. A. Andersson J. Sun

Articles you may be interested in Graphene based field effect transistor for the detection of ammonia Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Appl.

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