Abstract– In this paper, two low noise amplifiers (LNAs), one without feedback and another one with active shunt partial feedback, are proposed for ultra wide band (UWB) applications. Both the proposed LNAs are designed using 90 nm CMOS technology and their performance parameters are analyzed by using post layout simulation. The proposed LNA without feedback achieves a power gain (S21) of 16.4 ...

This paper presents the design, fabrication and performance of a three-stage 155GHz monolithic low noise amplifier (LNA) using 0.1 -pm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 155 GHz, and more than 10 dB gain from 151 to 156 GHz. When this amplifier is biased for low noise figure, a noise figure of 5.1 dB with associ...

The implementation of Low Noise Amplifier (LNA) front-ends is one of the challenging aspects in emerging Ultra Wide-Band (UWB) radio frequency (RF) systems. As it is highly desirable to achieve complete system-on-chip (SoC) integration, several CMOS based LNA implementations have been reported recently. The first part of this thesis presents a comparative study that helps designers understand t...

Most low noise amplifier designs focus on eliminating sources of noise that are intrinsic to the amplifier (thennal noise, Ilfnoise). As integrated drcuit design moves increasingly towards mixed signal implementations, the design of low-noise analog amplifiers must be re...evaluated to consider the switching noise generated by on-<:hip digital circuitry. We designed three fully differential ver...

In February 2002, the Federal Communications Commission (FCC) gave the permission for the marketing and operation of a new class of products incorporating Ultra Wide Band (UWB) technology. The early applications of UWB technology were primarily radar related, driven by the promise of fine-range resolution that comes with large bandwidth. But the recent 3.1-10.6GHz allocation extends the UWB use...

In this paper we present an ultra low-voltage (ULV) floating-gate (FG) transconductance amplifier The amplifier is can operate at supply voltages down to 0.3V in a standard digital double poly CMOS process . The amplifier consists of three subcircuits, the single input analog FG inverter, the additive (double input) analog FG inverter with tunable gain and a FG digital inverter. Preliminary mea...