نتایج جستجو برای: unilateral transistor model

تعداد نتایج: 2155669  

2005
Valentin O. Turin Alexander A. Balandin

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor fieldeffect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor perfor...

2013
Caio G. P. Alegretti Vinicius Dal Bem Renato P. Ribas André I. Reis

This paper presents a gate sizing method which formulates minimum active area solutions under delay constraints. It is based on the logical effort delay model. Such minimization of transistor widths has direct impact on the power consumption and circuit area reduction. The explicit formulation of the method takes into account the maximum input capacitance, the output load to be driven, and the ...

Journal: :Microelectronics Reliability 2005
V. Huard M. Denais F. Perrier N. Revil C. R. Parthasarathy Alain Bravaix E. Vincent

An overview of evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a phys...

Journal: :Physical review letters 2010
Y Paltiel G Jung T Aqua D Mocatta U Banin R Naaman

A collective electron transfer (ET) process was discovered by studying the current noise in a field effect transistor with light-sensitive gate formed by nanocrystals linked by organic molecules to its surface. Fluctuations in the ET through the organic linker are reflected in the fluctuations of the transistor conductivity. The current noise has an avalanche character. Critical exponents obtai...

Journal: :International Journal of Electrical and Computer Engineering (IJECE) 2020

2013
Shikha Singh Seema Narwal

This paper presents a new design for 14 transistor single bit full adder, implemented using five transistor XNOR/XOR cell and transmission gate multiplexer. For transmission gate multiplexer complementary gate control signals are required and in 14 transistor full Adder both XOR and XNOR signals are generated. XNOR/XOR cell shows high power consumption than single XNOR gate. So, 8 transistor fu...

Journal: :iranian journal of nuclear medicine 2014
maged abdel galil hamed

introduction: the selection of   optimal treatment of obstructive nephrouropathy requires information about the functional status of each kidney. nuclear renal scanning objectively measure differential renal function, multiple studies have demonstrated the role of assessment of renal perfusion and gfr with triphasic ct. the aim of this study is to assess the role of ct based on renal parenchyma...

Journal: :medical journal of islamic republic of iran 0
shayesteh jahanfar ob-gyn, iran university of medical john a. eden from the school of obstetrics and gynecology, frank ru ndle house, royal hospital for women, 188 oxford st., paddington, nsw, australia, 2021.

two-hundred and seventeen subjects underwent transvaginal ultrasound -17 (8%) had unilateral polycystic ovary (pco). twelve percent of subjects with unilateral scan-pea had oligomenorrhea, 24% were amenorrheic, 23% were hirsute and 29% had acne. biochemical parameters were compared between subjects with unilateral scan- pco and those with bilateral scan- pco (n=200) as well as a group of scan-n...

Journal: :Physics and High Technology 2010

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