Crystal facet engineering of semiconductors is of growing interest and an important strategy for fine-tuning solar-driven photocatalytic activity. However, the primary factor in the exposed active facets that determines the photocatalytic property is still elusive. Herein, we have experimentally achieved high solar photocatalytic activity in ultrathin BiOCl nanosheets with almost fully exposed ...

Defects always exists in a crystal lattice at temperatures above absolute zero. Our knowledge of defect concentration and mobility is crucial, due to their profound influence on the material properties. By the means of thermodynamics it is possible to estimate defect concentrations at the equilibrium conditions. Near the melting point of pure metals the vacancy fraction is typically about 10−4....

Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (∼13) for sp(3)-defects, it decreases for vacancy-like defect...

The annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio method based on density-functional theory. The interstitial-vacancy recombination, the diffusion of vacancies, and interstitials to defect sinks ~e.g., surfaces or dislocations! as well as the formation of interstitial clusters are considered. The calculated migration and reaction barriers suggest a ...

Despite the unique occurrences of structural defects in graphene synthesis, the fracture mechanism of a defective graphene sheet has not been fully understood due to the complexities of the defects. In this study, the fracture mechanism of the monolayer graphene with four common types of defects (single vacancy defect, divacancy defect, Stone-Wales defect and line vacancy defect) were investiga...

We apply positron annihilation spectroscopy to identify V(N)-Mg(Ga) complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth annealings at 500-800 degrees C. We conclude that V(N)-Mg(Ga) complexes contribute to the electrical compensation of Mg as well as the activation of p-type conductivity in the annealing. The observation of V(N)-Mg(Ga) complexes confirms that vac...

Molecular dynamic simulation method has been employed to consider the critical buckling force, pressure, and strain of pristine and defected single-walled carbon nanotube (SWCNT) under axial compression. Effects of length, radius, chirality, Stone-Wales (SW) defect, and single vacancy (SV) defect on buckling behavior of SWCNTs have been studied. Obtained results indicate that axial stability of...

Thermal annealing effects on the characteristics of intrinsic defects in unintentionally doped 4H–SiC were investigated. The 4H–SiC samples were prepared by Low-Pressure Chemical Vapor Deposition (LPCVD) technique. Results show that there is only one Electron Spin Resonance (ESR) peak and a broad, from green to yellow, photoluminescence (PL) band were detected. These results are attributed to t...

In this study un-doped and Eu-doped ZnO nanorods and microrads were fabricated by Chemical Vapor Deposition (CVD) method. The effects of annealing, synthesis temperature and structure on structural and photoluminescence properties of Eu-doped ZnO samples were studied in detail. Prepared samples were characterized using X-Ray diffraction (XRD), scanning electron microscopy (SEM), particle size a...

Articles you may be interested in Acoustic phonon assisted free-carrier optical absorption in an n-type monolayer MoS2 and other transition-metal dichalcogenides J. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects Appl. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field ...