Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

Diamond-coated steel is considered an important issue in synthetic diamond technology due to the great economical importance of enhancing the wear resistance and surface hardness of commercial Fe-based alloys. However, direct diamond coating by chemical vapour deposition (CVD) is rather problematic—adhesion and growth are seriously affected. The use of interlayers is a common approach to minimi...

During normal operation of the high confinement mode in future ITER devices, edge-localized modes (ELMs) are a potential threat to the divertor components lifetime and plasma contamination. To predict the outcome of the direct ELM plasma impact on the divertor plate, conversion of plasma energy into radiation in the shielding layer, and then the resulting energy deposition of radiation flux to ...

This paper is a review on the status of hard coating of various physical vapour deposition (PVD) techniques and compare their properties. The use of hard and wear resistant PVD coatings on cutting tools is now widespread in global manufacturing for reducing production cost and improving productivity, all of which are essential if industry is to remain economically competitive. The review includ...

A simple one-dimensional Monte Carlo model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The top of a step-edge is considered to have an infinite Ehrlich-Schwoebel potential barrier, so that mobile surface species can...

We report simultaneous lateral growth of a high density of highly oriented, metal-catalyzed silicon nanowires on a patterned silicon substrate and bridging of nanowires between two vertical silicon sidewalls, which can be developed into electrodes of an electronic device. After angled deposition of catalytic metal nanoparticles on one of two opposing vertical silicon surfaces, we used a metal-c...

In order to reach high level of transistor performances, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in conduction channel is to generate strain in the structure induced by process. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhan...

The partially fluorinated oxo-alkoxide tungsten(VI) complexes WO(OR)4 [4; R = C(CH3)2CF3, 5; R = C(CH3)(CF3)2] have been synthesized as precursors for chemical vapour deposition (CVD) of WOx nanocrystalline material. Complexes 4 and 5 were prepared by salt metathesis between sodium salts of the fluoroalkoxides and WOCl4. Crystallographic structure analysis allows comparison of the bonding in 4 ...

The use of a molecular gold organometallic cluster in chemical vapour deposition is reported, and it is utilized, together with a tungsten oxide precursor, for the single-step co-deposition of (nanostructured) tungsten oxide supported gold nanoparticles (NPs). The deposited gold-NP and tungsten oxide supported gold-NP are highly active catalysts for benzyl alcohol oxidation; both show higher ac...