In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new me...

Abstract The etching characteristics were studied via time-modulation bias (bias pulsing) by varying the pulsing parameters. etch profiles verified using polysilicon gate structures with dense and isolated patterns. Ion energy was defined as peak-to-peak voltage ( V pp ) controlled RF power. durations of on period off (off time) adjusted pulse frequency duty cycle. Profile evolution observed in...

statement of problem: hemostatic agents may affect the micro-leakage of different adhesive systems. also, chlorhexidine has shown positive effects on micro-leakage. however, their interaction effect has not been reported yet. objectives: to evaluate the effect of contamination with a hemostatic agent on micro- leakage of total- and self-etching adhesive systems and the effect of chlorhexidine a...

Hexagonal GaN microprism structures were fabricated by pulsed selective epitaxial growth (SEG) under conditions that suppressed lateral overgrowth. Unlike previously reported pulsed SEG processes in which the precursor gas flow was modulated by valves, the approach reported here utilizes a flow geometry that produces a significant deposition rate only over the downstream portion of the 2 in waf...

Multi-project-wafer (MPW) services provide an economical route for prototyping of new electronic circuit designs. However, addition of MEMS functionality to MPW circuits by post-processing (also known as MEMS-last processing) is difficult and inefficient because MPW typically yields individual dies. One solution to this problem is to embed the MPW dies in a carrier wafer prior to MEMS processin...

This paper describes the details of a novel manufacturing process integration of CMOS (Complementary Metal-Oxide-Semiconductor) transistor architecture, which is incorporated into a sub-micron logic technology on 300mm wafers. As the gate length is scaling down, the spacer design for CMOS transistor becomes increasingly important especially for high performance. Experimental manufacturing proce...

Cl2, Br2, HBr, Br2/Cl2, and HBr/Cl2 feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br2/A...

We report a simple, clean, and highly anisotropic hydrogen etching method for chemical vapor deposited (CVD) graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 °C, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent. Compared ...

The surface oxidation of Al metal masks in an oxygen plasma was studied for realizing deep dry-etch of silica optical waveguides. The oxidation efficiency of the plasma was found to depend on mainly substrate bias and plasma power. Net sputtering effect happened when ion bombarding potential exceeds certain critical value. However, suitable ion bombarding energy is of benefit to the oxidation p...

GaAs etch characteristics like etch rate, etch profile sidewall angle, etch surface morphology and selectivity are studied as a function of Inductively Coupled Plasma (ICP) power and Cl2/BCl3 flow rate ratio in ICP at low pressure (<15mTorr) and low RF bias power (<100W) regime to achieve moderate GaAs etch rate with an-isotropic profiles and smooth surface morphology. The low pressure regime e...