In this paper, a novel power amplifier (PA) is proposed. An asymmetrical branch-line coupler exploited as the output matching circuits of proposed PA. Meanwhile, by setting impedance conditions with trade-off in desired pass-band appropriately, and combination can be realized single circuit. A brief analysis presented. Compared traditional high-power PAs design method, method meet requirement m...

Low noise amplifier when simulated for system level configuration, the scattering matrix in general and scattering parameters in specific play vital role in performance of low noise amplifier for various frequency bands. In this paper the scattering parameter performance was analyzed for C-band for recent process technologies available for CMOS and BiCMOS for IEEE 802.11 b/g.

This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for wideband system. Through well-designed parameter values of the and matching structure circuit, relatively flat frequency response was obtained over wide band. Simultaneously, in order to reduce fluctuation current caused by environmental tem...

A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14 GHz and 2.35 GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA f...

An original scheme for constructing an ultra-wideband single-transistor generator of noise-like oscillations the microwave range wavelengths was proposed. The contains inertial converter output signal a nonlinear amplifier with positive feedback, which modulates supply voltage active element (transistor). experimental model chaotic based on powerful domestic transistor 2T982A-2 operating in sma...

Introduction. A method for designing power amplifiers use in the transmitting channels of X-band transceiver modules is investigated. The design process was aimed at optimizing relationship between basic amplifier characteristics, including operating frequency band, output level, linearity, high harmonics suppression, etc. Aim . Investigation a an UHF amplifier, which capable its main character...

This paper reviews the major contributions proposed in literature for implementing multi-band low noise amplifiers in CMOS technology. Concurrent, switched and switched concurrent low noise amplifiers are investigated. Advantages and drawbacks are also discussed. The article tries to offer good insights on the implementation of multi-band low noise amplifiers. Keywords-CMOS; low noise amplifier...

We report a fiber-optic parametric amplifier with ultra-broad and flat gain band by using a longitudinally tailored optical fiber. The parametric amplifier has been designed from realistic numerical simulations combined with an inverse algorithm to obtain a flat and wide gain band through fiber dispersion management. We experimentally report ~12 THz gain bandwidth on the Stokes side of the pump...

Low noise amplifier when simulated for system level configuration, the scattering matrix in general and scattering parameters in specific play vital role in performance of low noise amplifier for various frequency bands. In this paper the scattering parameter performance was analysed for S-band for recent process technologies available for CMOS and BiCMOS for IEEE 802.11 b/g.

This paper describes a novel experiment on nitroxide radical spin labels using a multiarm EPR W-band bridge with a loop-gap resonator (LGR). We demonstrate EPR spectroscopy of spin labels by linear sweep of the microwave frequency across the spectrum. The high bandwidth of the LGR, about 1 GHz between 3 dB points of the microwave resonance, makes this new experiment possible. A frequency-tunabl...