نتایج جستجو برای: wafer pollutants

تعداد نتایج: 51061  

2011
Ronaldo D. Mansano Ana Paula Mousinho

In this work, we studied the electro-optical properties of high-aligned carbon nanotubes deposited at room temperature. For this, we used the High Density Plasma Chemical Vapor Deposition system. This system uses a new concept of plasma generation: a planar coil is coupled to an RF system for plasma generation. This was used together with an electrostatic shield, for plasma densification, there...

2010
Dinçer Bozkaya Sinan Müftü

In chemical mechanical planarization, abrasive particles are pushed onto a wafer by a deformable pad. In addition to the pad–particle contact force, surface forces also act between the wafer and the particles. Experimental studies indicate the significance of slurry pH and particle size on the material removal rate MRR . In this work, a model for MRR, including the contact mechanics of multiple...

2004
Jong-Seung Park

As a microassembly and an encapsulation technique, wafer bonding offers a unique opportunity to combine different materials. Transmission laser bonding not only can satisfy wafer level bonding requirements, but can also be directly implemented into the existing automatic semiconductor fabrication line. In this paper, a laser-induced wafer bonding technique for micro-electro-mechanical systems (...

1996
Mark J. Kushner Wenli Z. Collison Michael J. Grapperhaus John P. Holland Michael S. Barnes

Inductively coupled plasma ~ICP! etching reactors are rapidly becoming the tool of choice for low gas pressure, high plasma density etching of semiconductor materials. Due to their symmetry of excitation, these devices tend to have quite uniform etch rates across the wafer. However, side to side and azimuthal variations in these rates have been observed, and have been attributed to various asym...

2011
Zlatko Sotirov

Nowadays, the overall productivity of the semiconductor FABs is becoming more and more dependent on the performance of the robotic systems, responsible for material handling within the front-end and back-end mini-environments. Regardless of how long particular processes take, the time for exchanging an already processed wafer, with an unprocessed one, is always becoming a bottleneck in the urge...

2003
Robert Falster

Accurate control of the defectivity of silicon crystals and wafers is a subject of immense importance to both the silicon and IC industries. Exploding costs of wafer development and production as well as the processing of 300mm wafers means that predictive defect engineering is now, more than ever a requirement for both industries. There is little scope any more for iterative approaches to thes...

2004
J. J. Vlassak

A new contact-mechanics-based model for chemical–mechanical polishing is presented. According to this model, the local polish rate is controlled by the pressure distribution between features on the wafer and the polishing pad. The model uses an analysis based on the work by Greenwood to evaluate this pressure distribution taking into account pad compliance and roughness. Using the model, the e2...

Journal: :Anesthesia and analgesia 2012
Chin Beng Stephen Lim Stephan A Schug Vivian Bruce Sunderland Michael James Paech Yandi Liu

BACKGROUND The sublingual administration of opioids is a simple and noninvasive method that provides rapid analgesia. In this phase I study we investigated the pharmacokinetics and bioavailability of a fentanyl wafer in healthy volunteers. The principal study objective was to investigate the pharmacokinetic profile of a new sublingual fentanyl wafer and to establish its absolute bioavailability...

1999

In order to better understand the role of the uid behavior in CMP, we measured slurry transport beneath a glass wafer. We quanti ed the slurry transport using Residence Time Distribution techniques and two measures of slurry transport e ciency de ned as the percentage of new slurry beneath a wafer. Slurry transport e ciency depended on platen speed, ow rate, and the conditioning method. We foun...

2002
Jerry White

A new wafer level package has been designed and fabricated in which the entire package can be constructed at the wafer level using batch processing. Peripheral bondpads are redistributed from the die periphery to an area array using a redistribution metal of sputtered aluminum or electroplated copper and a redistribution dielectric. Redistribution of metal at the wafer level aids in eliminating...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید