We report the first-principles electronic structure of BiVO4, a promising photocatalyst for hydrogen generation. BiVO4 is found to be a direct band gap semiconductor, despite having band extrema away from the Brillouin zone center. Coupling between Bi 6s and O 2p forces an upward dispersion of the valence band at the zone boundary; however, a direct gap is maintained via coupling between V 3d, ...

The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...

The photoassisted oxidations of a number of compounds, including hydroquinone, p-aminophenol, I, Br-, C1-, Fez+, Ce3+, and CN-, at polycrystalline Ti02 are demonstrated. Many of these compounds compete for photogenerated holes with the solvent with high current efficiencies. Ethanol, CN-, and ethyl formate are oxidized by a current doubling mechanism. The majority of these compounds can be oxid...

Cu and Ni ferrites as the semiconductor materials were synthesized by a microwave sol-gel auto-combustion method. Two cationic surfactants, sodium dodecyl sulfate (SDS) and cetyltrimethylammonium bromide (CTAB), were applied and the influence of surfactants on the properties of the Cu and Ni ferrite particles was studied. The samples were characterized by X-ray powder diffraction (XRD) pattern,...