High-pressure in situ angular dispersive x-ray diffraction study on the wurtzite-type InN nanowires has been carried out by means of the image-plate technique and diamond-anvil cell (DAC) up to about 31.8 GPa. The pressure-induced structural transition from the wurtzite to a rocksalt-type phase occurs at about 14.6 GPa, which is slightly higher than the transition pressure of InN bulk materials...

Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and t...

A unique all-wurtzite ZnO/ZnSe hetero-nanohelix is formed via growing wurtzite ZnSe nanoteeth on ZnO nanobelts through a one step thermal evaporation method. The microstructure and growth mechanism of the hetero-nanohelix are investigated in detail. The formation of metastable wurtzite ZnSe is attributed to the wurtzite ZnO template. Mechanical forces, thermal expansion and polar plane in hexag...

Basal-plane stacking faults in wurtzite AlN, GaN, and InN are studied using density-functionalpseudopotential calculations. The formation energies follow the trend exhibited for the zinc-blende/wurtzite energy differences in the bulk materials, namely, lowest energy for GaN and highest for AlN. Type-I stacking faults have the lowest energy, followed by type-II stacking faults, and finally extri...

Abstract Pure ZnO and Cr-doped nanoparticles have been synthesized via a facile chemical co-precipitation route their structural, thermal characteristics were discussed systematically. In the experimental producer, doping concentration has varied range, 0.05–0.1 M, while calcined at 600 °C. The influence of Cr-doping on physical was investigated addressed. As-prepared samples analyzed XRD, FTIR...

Related Articles An investigation of the Young's modulus of single-crystalline wurtzite indium nitride using an atomic force microscopy based micromechanical bending test Appl. Phys. Lett. 101, 221906 (2012) A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100) Appl. Phys. Lett. 101, 212102 (2012) Band-edge density-of-states and carrier concentra...

ZnO nanoparticles were successfully synthesized by the biosynthesis method using water extract of Moringa leaf (Moringa oleifera L.) as a reducing agent and stabilizer well capping agent. This study aimed to characterize their application antibacterial photocatalyst. Characterization was carried out Fourier Transform Infrared (FT-IR) Spectroscopy X-Ray Diffraction (XRD). The have hexagonal wurt...

The theoretical models for calculations of band structure of wurtzite InN have been studied. Several models including nearly free electron model, pseudopotional method, Tight-Binding moethod and k·p method will be discussed. Currently most InN epitaxial films grown on GaN or sapphire substrate have wurtzite structure. To study the symmetry properties of the electron wave function in wurtzite st...

Bulk crystals of ZnS usually take the zinc blende structure. However, the vapor deposited one-dimensional ZnS nanostructures normally take the metastable wurtzite structure. This Letter investigates the conditions under which the formed phase can be controlled between zinc blende and wurtzite in nanomaterials synthesis. The formation of pure zinc blende structured ZnS nanobelts is related not o...

Abstract In this work, Cu-Zn-Sn (CZT) is co-electrodeposited onto a flexible Mo substrate exploiting an alkaline bath (pH 10). The plating solution studied by cyclic voltammetry, highlighting the effects of potassium pyrophosphate (K 4 P 2 O 7 ) and EDTA-Na on electrochemical behavior stability metallic ionic species. optimized synthesis results in homogeneous precursor layer, with composition ...