The paper presents the implementation of a standard cell multigate fully synthesizable rail-to-rail dynamic voltage comparator. comparator works on deep sub-threshold supply VDD =0.3 V with common mode inputs. common-mode input range is VDD/2 minimum offset ranging between 8mV to 28mV. Thus circuit simulated at 180nm Complementary Metal-Oxide Semiconductor (CMOS) process. Hence has measured and...

Due to the scaling of CMOS, limitations these devices raised need for alternative nano-devices. Various are proposed like FinFET, TFET, CNTFET. Among these, FinFET emerges as one promising which can replace CMOS due its low leakage in nanometer regime. The electronics nowadays more compact and efficient terms battery consumption. SRAMs have been replaced by CMOS. Two SRAM cells power having hig...

This paper demonstrates the acoustic resonance of an Independent-Gate (IG) FinFET driven with internal dielectric transduction and sensed by piezoresistive modulation of the drain current through the transistor. An acoustic resonance at 37.1 GHz is obtained with a quality factor of 560, corresponding to an f.Q product of 2.1x10. The demonstrated hybrid NEMS-CMOS technology can provide RF CMOS c...

This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternatives. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flex...

Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily usi...