A dielectrically defined gate process has been developed that uses optical lithography to pattern near quarter micron Tgates. Record output power densities of 2.0 and 1.8 W/mm have been measured at 2 and 10 GHz, respectively. When applied to an X-band MMIC circuit, significantly higher power was measured. The new process offers improved performance and throughput compared to the standard ebeam ...

This work consists in a numerically evaluation of elastic fields distribution, caused by intrinsic dislocation networks placed at a nanometric trilayers interfaces, in order to estimate their influence on the surface topology during heterostructure operation. The organization of nanostructures is ensured by the knowledge of different elastic fields caused by buried dislocation networks and calc...

Infrared detectors can be used for a variety of applications such as: using in fiber-optic communications. Conventional technology for IR detectors is using p-i-n structure based on GaAs compound. This paper reports on the design and modeling of an IR detector using a p-i-n GaAs structure. Comsol software is used to simulate the model and the detector is discussed for terminal current, dopant p...

Boron arsenide, the typically-ignored member of the III–V arsenide series BAs–AlAs–GaAs– InAs is found to resemble silicon electronically: its Γ conduction band minimum is p-like (Γ15), not s-like (Γ1c), it has an X1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked...

Porous GaAs was prepared using electrochemical anodization technique of a cristalline GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions. The physical properties of porous GaAs are mainly determined by the shape, diameter of pores, porosity, and the thickness of deposited porous layers. Depending on the etching parameters such as current density, HF con...

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted...

We present a comparative study of the growth of tensile-strained GaP on the four low-index surfaces of GaAs: (001), (110), (111)A, and (111)B. For each surface orientation we outline the growth conditions required for smooth GaAs homoepitaxy. We are able to predict the resulting surface morphology when GaP is deposited onto these four GaAs surfaces by considering the influence of surface orient...

We demonstrate the first long-wavelength (Xc= 20 pm) quantum WN infrared photodetector using non-lattice matched InxGaj-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. The dctcctivity has been found to be comparable to those achieved with the usual lattice matched GaAs/AlxGal-XAS detectors.

Through the utilization of index-matched GaAs immersion lens techniques, we demonstrate a record extinction (12%) of a far-field focused laser beam by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time resonant laser transmission spectroscopy on a single InAs/GaAs quantum dot without the need for phase-sensitive lock-in detection.