We investigate the strain-induced electronic and magnetic properties of single-layer (1L) MoS2 with vacancy defects using the density functional theory calculation. When the tensile strain is applied, 1L-MoS2 with vacancy becomes ferromagnetic and metallic. We elucidate that, from the electronic band structure of vacancy-defect-doped 1L-MoS2, the impurity bands inside the gap play a role of see...

Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environm...

Two-dimensional (2D) materials offer numerous advantages for electrochemical energy storage and conversion due to fast charge transfer kinetics, highly accessible surface area, and tunable electronic and optical properties. Stacking of 2D materials generates heterogeneous interfaces that can modify native chemical and physical material properties. Here, we demonstrate that local strain at a car...

The thinnest semiconductor, molybdenum disulfide (MoS2) monolayer, exhibits promising prospects in the applications of optoelectronics and valleytronics. A uniform and highly crystalline MoS2 monolayer in a large area is highly desirable for both fundamental studies and substantial applications. Here, utilizing various aromatic molecules as seeding promoters, a large-area, highly crystalline, a...

The identification of the active sites in heterogeneous catalysis requires a combination of surface sensitive methods and reactivity studies. We determined the active site for hydrogen evolution, a reaction catalyzed by precious metals, on nanoparticulate molybdenum disulfide (MoS2) by atomically resolving the surface of this catalyst before measuring electrochemical activity in solution. By pr...

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type ...

We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshol...

We report on the electrochemical charge storage behavior of few-layered flakes of molybdenum disulfide (MoS2) obtained by liquid phase exfoliation of bulk MoS2 powder in 1-dodecyl-2-pyrrolidinone. The specific capacitances of the exfoliated flakes obtained using a 6 M KOH aqueous solution as an electrolyte were found to be an order of magnitude higher than those of bulk MoS2 (∼0.5 and ∼2 mF cm(...

Submitted for the MAR13 Meeting of The American Physical Society Investigation of E1 2g and A1g Raman Modes of Few-Layer MoS2 on HfO2 Substrate HUI-CHUN CHIEN, JATINDER KUMAR, HSIN-YING CHIU, University of Kansas — The recent research work by Radisavljevic et al.[1] shows that the mobilities of monolayer MoS2 transistors can be improved by employing a thin layer of hafnium oxide as top-gate die...