Silicon carbide and graphene possess extraordinary chemical physical properties. Here, these different systems are linked the changes in structural dynamic properties investigated. For simulations performed a classical molecular (MD) approach was used. In this approach, layer (N = 240 atoms) grafted at distances on top of 6H-SiC structure 2400 onto 3C-SiC 1728 atoms). The between 6H 1.0, 1.3 1....

Optimization of the culture medium for cellulase production using Trichoderma reesei was carried out. The optimization of cellulase production using mango peel as substrate was performed with statistical methodology based on experimental designs. The screening of nine nutrients for their influence on cellulase production is achieved using Plackett-Burman design. Avicel, soybean cake flour, KH(2...

The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating g...

The literature shows that inorganic phase change materials (PCM) have been very seldom microencapsulated, so this study aims to contribute to filling this research gap. Bischofite, a by-product from the non-metallic industry identified as having good potential to be used as inorganic PCM, was microencapsulated by means of a fluidized bed method with acrylic as polymer and chloroform as solvent,...

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeate...

Net blotch, caused by Pyrenophora teres, is one of the most economically important diseases of barley worldwide. Here, we used a barley doubled-haploid population derived from the lines SM89010 and Q21861 to identify major quantitative trait loci (QTLs) associated with seedling resistance to P. teres f. teres (net-type net blotch (NTNB)) and P. teres f. maculata (spot-type net blotch (STNB)). A...

Basidiocarps of Trametes versicolor with an epiphytic flora (including Trebouxia sp.) collected from north-central Rhode Island were incubated in an atmosphere of C labeled CO2 for 6 hours. Using autoradiography, the location of the fixed CO2 was determined at 6h, 12h, 24h, 48h, 96h, and 192h. The fixed C was recorded in the epiphytic algae after 6h, and at all subsequent times. After 192h the ...

Re-investigation of the methanolic extract of Anisotes trisulcus (Forssk.) Nees aerial parts led to the isolation of two new tricyclic quinazoline alkaloids, 8-amino-7,8,9,11-tetrahydro-6H-pyrido[2,1-b]-quinazoline-2,6-diol (4) and 8-amino-3,6-dihydroxy-7,8,9-trihydro-6H-pyrido[2,1-b]quinazoline-11-one (5), and two quaternary ammonium compounds, (dimethylamino)-N-(hydroxymethyl)-N,N-dimethyl me...

Vicinal 4H and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed the characteristic self-ordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index (112;n) that are...

Recent progress in the growth of high quality 6H-SiC single crystal leads to an ideal substrate material for GaN epitaxial films. Nearly matching lattice constants of wurzite GaN to 6H-SiC in the hexagonal plane can reduce strain effects at the interface. We employed the sublimation sandwich method to grow single crystal layers at reasonable growth rates with free carrier concentrations of 2x10...