A 2.4-GHz single-stage CMOS low noise amplifier (LNA) structure with ultra low power consumption is proposed. A current reuse technique is used to decrease power dissipation with increasing amplifier transconductance for the LNA. Thus, the same amplifier transconductance for the LNA will be achieved at decreased power dissipation. Also, due to the use of an inverter-type amplifier which has a s...

As a design study for the LHC experiments a 'Low Noise Amplifier Shaper' for capacitive detectors is developed. This amplifier is designed in 0.6 um CMOS technology from AMS. The goal was to design an amplifier with a noise contribution of 250 electrons, and 12 electrons per pF contribution from the input capacitor and a relative high gain. A test chip with two versions of the amplifier, a 'rad...

A high-gain wide-bandwidth three-stage amplifier, which employs dual-miller compensation with nulling-resistor and dual-feedforward compensation (DMCNR-DFC), is designed and analyzed in this paper. By adopting the technique of DMCNR-DFC, the designed three-stage amplifier achieves well performance including gain-bandwidth product (GBW) and slew rate (SR). The improved DMCNR-DFC three-stage ampl...

High gain amplifiers with fast settling times are needed for high-speed data converter applications. A cascaded amplifier architecture is discussed that can make use of several architecturally identical amplifies to achieve the desired gain. Only one of the amplifiers has a gainbandwidth product requirement that is modestly higher than the rest to keep the overall structure stable in the presen...

In this paper we propose a novel method of realizing discrete-time (D-T) signal amplification using NanoElectro-Mechanical (NEMS) devices. The amplifier uses mechanical devices instead of traditional solid-state circuits. The proposed NEMS-based D-T amplifier provides high gain and operate on a wide dynamic range of signals, consuming only a few micro watts of power. The proposed concept is sub...

We demonstrate a new type of four-pass dye laser amplifier that can reduce the possibility of parasitic oscillation between optical components used in the amplifier. Pumping the amplifier with a 5.6-mJ Q-switched doubled Nd:YAG laser output, we obtain high-peak-power pulsed output of an incident cw narrow-bandwidth dye laser beam with a power gain greater than 2 x 10(6) . Subsequent amplificati...

Absrracl A highly linear CMOS RF amplifier and mixer circuits adopting MOSFET transconductance linearization bv linearlv suoemosine several commonTherefore it is very important to linearize MOSFET transconductance for both RF amplifier and mixer circuits. We have shown that multide eated transistor (MGTR) 111 ~ _ . source FET transistors in parallel, combined with some additional circuit techni...

We investigate the energy optimization (minimization) for amplified links. We show that using the using a well-established analytic nonlinear signal-to-noise ratio noise model that for a simple amplifier model there are very clear, fiber independent, amplifier gains which minimize the total energy requirement. With a generalized amplifier model we establish the spacing for the optimum power per...

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The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its...