Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and d...

In pursuit of p-type doping, we have implanted GaN with Mg ions at 200 and 500 keV with the substrate temperature maintained at −150 cold or +300 °C hot during ion irradiation. The samples have been annealed at 1000 °C postion implantation. The radiation damage peak position and its profile , the dopant distribution, and the damage stability during annealing were all shown to be dependent upon ...

A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As2/Ga flux ratio. It is found that the L3 peak of the absorption spectroscopy is enhanced after low temperature LT annealing. Furthermore it is shown that a more localized electronic structure nearly like the d5 high-spin state is obtained. It can be attribute...

We known that the three major methods to recrystallize amorphous silicon are: Rapid Thermal Annealing(RTA), Excimer Laser Crystallization (ELC) and Solid Phase Crystallization(SPC)[3.1][3.2].Solid phase crystallization and RTA has several advantages over laser crystallization which include smoother surfaces, better uniformity, and batch process in furnace annealing. But in order to achieve the ...

It has been shown that gallium antimonide (GaSb)-based dilute-nitrides display improved photoluminescence (PL) with in situ annealing in the molecular beam epitaxy (MBE) growth chamber under a Sb ambient. This improvement in luminescence efficiency translates into improved performance of optoelectronic devices, such as lasers, where this will lead to a reduction in threshold current densities. ...

Abnormal behavior of dopant activation was observed in P + /B + ion shower doped poly-Si upon post implant annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of PH3/H2 or B2H6/H2. Activation annealing was conducted using a tube furnace in the temperature ranges from 350 o C to 650 o C. Hall measurement revealed that reverse annealing occurred for poly-...

Epitaxial cobalt films in the thickness range of 3.9 to 8.6 nm were deposited on Al2O3@112̄0# substrates by dc magnetron sputtering at a substrate temperature of 315 °C. In situ annealing was performed in a vacuum after which the samples were rapidly quenched to room temperature in order to preserve the high temperature structure. Ex situ atomic-force microscopy revealed that surface roughening ...

The formation of nano/ultrafine grained ferrite in low carbon steels containing different amounts of niobium was investigated using thermomechanical treatment which consisted of annealing of 85% cold rolled martensite with different parameters. The specimens were characterized by optical and scanning electron microscopy and Vickers hardness test. A lamellar dislocation cell structure was formed...

We report measurements of rapid ordering and preferential alignment in block copolymer films zone annealed below the order-disorder transition temperature. The orientational correlation lengths measured after approximately 5 h above the glass-transition temperature ( approximately 2 microm) were an order of magnitude greater than that obtained under equivalent static annealing. The ability to r...

Nearly optimal solutions to many combinatorial problems can be found using stochastic simulated annealing. This paper extends the concept of simulated annealing from its original formulation as a Markov process to a new formulation based on mean field theory. Mean field annealing essentially replaces the discrete degrees of freedom in simulated annealing with their average values as computed by...