نتایج جستجو برای: band structure

تعداد نتایج: 1673409  

Journal: :Physical Chemistry Chemical Physics 2020

Journal: :international journal of nano dimension 0
n. bahrami panah department of chemistry, payame noor university, p.o. box. 19395-3697, tehran, iran. r. vaziri department of chemistry, k. n. toosi university of technology, p.o. box. 15875-4416, tehran, iran.

the structure and the electronic properties of single-walled zigzag bn and b3c2n3 nanotubes (n, 0; n=4–10) were investigated using first-principles calculations based on a density functional theory. a plane–wave basis set with periodic boundary conditions in conjunction with vanderbilt ultrasoft pseudo-potential was employed. the energy gap of zb3c2n3nts was calculated and compared with the cor...

R. Vaziri, S. Jalili

First principle calculations were performed using Density functional theory within the local spin density approximation (LSDA) to understand the electronic properties of Au(100)+TBT system and compare the results with Au(100) and bulk Au properties. Band structure, the total DOS and charge density for these materials are calculated. We found that the HOMO for Au(100)+TBT becomes broader than Au...

A fourth-degree Substrate Integrated Waveguide (SIW) crossed coupled band pass filter for WLAN band is designed by using a new negative coupling structure. It consists of two U shape microstrip lines on top and bottom planes with via holes at the center of them. This paper investigates the phase characteristics of negative and positive coupling structures and their effects. The design, fabricat...

ZnO and ZnO: Mn nanocrystals synthesized via reverse micelle method. The structural properties nanocrystals were investigated by XRD and Transmission electron microscopy (TEM). The XRD results indicate that the synthesized nanocrystals had a pure wurtzite (hexagonal phase) structure. The various optical properties of these nanocrystals such as optical band gap energy, refractive index, dielectr...

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

Journal: :Journal of Physics: Condensed Matter 2009

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