نتایج جستجو برای: birefringent thin film
تعداد نتایج: 188369 فیلتر نتایج به سال:
We proposed optical gas sensors based on PLCs integrated with SnO2 thin films. SnO2 thin film was placed on the core layer appeared by removing the upper cladding layer of PLC. The propagation loss is analyzed using 2-D finite-difference time-domain method as a function of refractive index change of SnO2 thin film. The propagation loss of 0.18 dB was observed when the change of refractive index...
In this paper, ferroelectric thin films, described by an ising model in a transverse field, have been studied under the mean-field approximation. We discuss a thin film composed of N-layer film of simple cubic symmetry with nearest-neighbor exchange in which the exchange strength and transverse field are assumed to be different from the bulk values in Ns surface layers, and we derive and illust...
We repeat our previous calculation about the effect of the spin-orbit-induced magnetic anisotropy on the Kondo temperature in the case of S = 5/2 impurity spin which is quite different from the integer spin case as the ground state is degenerated. In this case the Kondo contribution remains finite when the sample size goes to zero and the thickness dependence in the Kondo resistivity is much mo...
In this paper we review recent progress in materials, fabrication processes, device designs, and applications related to organic thin-film transistors (OTFTs), with an emphasis on papers published during the last three years. Some earlier papers that played an important role in shaping the OTFT field are included, and a number of previously published review papers that cover that early period m...
In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect s...
The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental resul...
LiNi0.4Co0.3Mn0.3O2 thin film electrodes are fabricated from LiNi0.4Co0.3Mn0.3O2 raw powder at room temperature without pretreatments using aerosol deposition that is much faster and easier than conventional methods such as vaporization, pulsed laser deposition, and sputtering. The LiNi0.4Co0.3Mn0.3O2 thin film is composed of fine grains maintaining the crystal structure of the LiNi0.4Co0.3Mn0....
This paper describes a computational learning model inspired by the technology of optical thin-film multilayers from the field of optics. It can be used as an alternative to the widely used neural network models. With the thicknesses of thin-film layers serving as adjustable “weights” for the computation, the optical thin-film model is capable of approximating virtually any kind of nonlinear ma...
In the present work, the performance of thin film GaAs solar cells with a mirror back contact is compared to regular GaAs cells on a substrate. A world record efficiency of 24.5% AM1.5G is obtained for a thin film cell with a gold mirror. The thin film cell thickness is only half of the regular GaAs cell thickness, which improves the radiation resistance for use in space applications and enhanc...
Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate gl...
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