In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

purpose : to evaluate the retinal nerve fiber layer (rnfl) and central corneal thickness (cct) in patients with exfoliation syndrome (xfs) methods : in this comparative case series we measures rnfl thickness and cct 30 patients with xfs and 30 age and sex matched healthy subjects who met the inclusion criteria. results : average rnfl in xfs group were significantly thinner than controls (94.36±...

purpose : to compare central corneal thickness (cct), corneal endothelial cell density, and lens capsule thickness in normotensive patients with and without pseudoexfoliation syndrome (pxs) methods : this was a prospective, comparative, descriptive study. normotensive candidates for cataract surgery with (study group) and without (control group) pxs were enrolled in the study. cct and corneal e...

The output resistance (hut) is one of the most important device parameters for analog applications. However, it has been difficult to model hut correctly. In this paper, we present a physical and accurate output resistance model that can be applied to both long-channel and submicrometer MOSFETs. Major short channel effects and hot-carrier effect, such as channel-length modulation (0 [l], drain-...

Voltage-dependent ion channels open and conduct ions in response to changes in cell-membrane voltage. The voltage sensitivity of these channels arises from the motion of charged arginine residues located on the S4 helices of the channel's voltage sensors. In KvAP, a prokaryotic voltage-dependent K+ channel, the S4 helix forms part of a helical hairpin structure, the voltage-sensor paddle. We ha...

The degradation of 100 nm effective channel length pMOS transistors with 14 A equivalent oxide thickness JVD Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concem. Hot-carrier reliability of 14 A Si3N4 transistors is compared to reliability of...

A comprehensive study of the intrinsic reliability of a 1.4-nm (equivalent oxide thickness) JVD Si3N4 gate dielectric subjected to constant-voltage stress has been conducted. The stress leads to the generation of defects in the dielectric. As the result, the degradation in the threshold voltage, subthreshold swing, gate leakage current, and channel mobility has been observed. The change in each...

In this paper we introduce an approach to model technological process of manufacture of a field-effect heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing of thickness of the heterotransistors and increasing of their density, which wer...

Abstract. A series of samples from four automotive materials AKDQ, HSLA50, DP600, and AA6022-T43 were deformed in a channel draw processes with different levels of draw bead penetration. As a result, varying magnitudes of deformations in plane strain mode and residual stresses were obtained. Through-thickness stress profiles were obtained non-destructively using a novel, high resolution X-ray d...

We consider the displacement, in a rectangular channel, of a Newtonian oil pushed by different types of liquids (Newtonian, shear-thinning, viscoelastic) of slightly higher apparent viscosity. In the absence of viscoelastic effects the interface between the two fluids becomes sharper at larger velocities, so that the thickness of the lateral film left behind increases with the flow rate. On the...