نتایج جستجو برای: chemical cleaning
تعداد نتایج: 395899 فیلتر نتایج به سال:
Graphene is a two-dimensional material with extremely favorable chemical sensor properties. Conventional nanolithography typically leaves a resist residue on the graphene surface, whose impact on the sensor characteristics has not yet been determined. Here we show that the contamination layer chemically dopes the graphene, enhances carrier scattering, and acts as an absorbent layer that concent...
The fabrication of SiC MEMS pressure sensor based on novel vacuum-sealed method is presented in this paper. The sensor was fabricated using surface micromachining. Due to its excellent mechanical properties and high chemical resistance, PECVD (Plasma Enhanced Chemical Vapor Deposition) SiC was chosen as structural material. Polyimide is the sacrificial layer which solve stiction problem in proc...
In different occupations cleaning has been identified as the work task causing the highest exposure to aerosol components. High pressure cleaning (hpc) is a cleaning method used in many environments and seems to be considered as a cleaning method causing high exposure. In the presented study, the literature concerning exposure to aerosols during hpc is reviewed. Only a few studies have been pub...
The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implem...
We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy b...
This study was conducted with the cleaning personnel of a university hospital in the city of Campinas, State of São Paulo. These are public employees whose work is mainly physical: cleaning is a job that requires heavy physical work; in addition, workers are also exposed to chemical products. The objective of this survey was to evaluate the work ability of cleaners from different age groups, fo...
Membrane fouling is one of the most important considerations in the design and operation of membrane systems as it affects pretreatment needs, cleaning requirements, operating conditions, cost and performance. Given that membrane fouling represents the main limitation to membrane process operation, it is unsurprising that the majority of membrane material and process research and development co...
Introduction: Antimonide (Sb) based quantum-well (QW) heterostructures such as InAsSb and InGaSb are of interest for III-V CMOS due to their superior electron and hole transport properties, and ability to be grown on a common metaphoric buffer [1-2]. However, a major challenge towards realizing Sb-based complementary MOSFET technology is the successful integration of a high-κ gate dielectric. S...
As device geometry continues to shrink, micro-contaminants have an increasingly negative impact on yield. By diminishing the contamination problem, semiconductor manufacturers will significantly improve the wafer yield. This paper presents a comprehensive and successful application of data mining methodologies to the refinement of a new dry cleaning technology that utilizes a laser beam for the...
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