As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the a...

TiO2-based magnetic semiconductors with high Co doping concentrations Ti1−xCoxO2 were synthesized under thermal nonequilibrium condition by sputtering machine. Microstructure and composition analysis by transmission electron microscopy, x-ray photoelectron spectroscopy, and electron energy-loss spectroscopy indicated that Co element was incorporated into TiO2 to form Ti1−xCoxO2 compound. The di...

Commercially available near-infrared (IR) imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fabrication costs of these image sensors. Furthermore, these typical III-V compound semiconductors are not sensitive to the visible region and thus ...

The selective deposition of compound semiconductors on single crystal silicon tip arrays produces optical quality, direct band gap materials on the silicon nanostructures. We demonstrate using the organometallic vapor phase epitaxy of GaInP that the direct band gap semiconductor nucleates selectively on the silicon tips. The structural properties of the tips ~whose radius of curvature is approx...

We investigate the properties of a tunable single-mode waveguide microcavity that is well suited for frequency modulation and switching. The cavity mode has a volume of less than one cubic half-wavelength, and the resonant frequency is tuned by refractive-index modulation. We suggest using a photorefractive effect to drive the device, based on the photoionization of deep donor levels known as D...

II-VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were grown epitaxially on ~111! and ~100! InP and GaAs substrates by excimer laser ablation. All of these films have good crystalline quality ~fully in-plane aligned! and mirror-like surface morphology. It was found that, on ~111!-oriented substrates, CdS and CdSe films were in the hexagonal phase with the c axis perpendicular to th...

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacan...

We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III–V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and h...

The atomic surface structure of compound semiconductors plays a large role in the growth of semiconductor films and the final microstructure of the film. During growth of InxGa1−xAs films, a mixed-termination surface consisting of a (4x3) reconstruction with common binary InAs or GaAs reconstructions, such as the α2(2x4), has been observed. We have used Density Functional Theory (DFT) to determ...