In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 degrees C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed t...

Phase-change memory materials have stimulated a great deal of interest although the size-dependent behaviors have not been well studied due to the lack of method for producing their nanoscale structures. We report the synthesis and characterization of GeTe and Sb(2)Te(3) phase-change nanowires via a vapor-liquid-solid growth mechanism. The as-grown GeTe nanowires have three different types of m...

Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide–silica nanowires. The axial growth direction approaches @311# for nanowires with a high density of microtwins and is @211# for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configurati...

Large-area Ag nanowires are ordered by spontaneous spreading of volatile droplet on a wettable solid surface. Compared with other nanowires orientation methods, radial shaped oriented Ag nanowires in a large ring region are obtained in an extremely short time. Furthermore, the radial shaped oriented Ag nanowires are transferred and aligned into one direction. Based on the hydrodynamics, the coa...

Metal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such a...

Suspended molecules of DNA are used as substrates for deposition of various metals by DC sputtering. The result is the formation of metallic nanowires, most with diameters of 10-50 nm. Homogeneous wires have been observed when a proper metal is chosen. For the first time, these DNA-templated nanowires are fabricated on substrates conducive to transmission electron microscopy. TEM and SEM analys...

We demonstrate the feasibility of fabrication of semiconducting nanowires (quantum dots) using F-actin as a template. Three different approaches of assembling quantum dots into nanowires are described. The nanowires were characterized by fluorescence microscopy.

Single crystalline zinc oxide (ZnO) nanowires have been grown on Si (100) substrates by a vapor-liquid-solid (VLS) process at temperatures in the range 850-950 °C in an inert atmosphere. The VLS-grown ZnO nanowires have been characterized in detail using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), transmission electron mi...

The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, w...

Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500°C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectrosco‐ py, scanning electron microscopy, high-resolution trans‐ mission electron microscopy and thermogravimetricdifferential scanning calorimetry. The results revealed that...