نتایج جستجو برای: czochralski

تعداد نتایج: 542  

2009
J. Bodzenta

Single crystals of GdCa4O(BO3)3 were examined to determine their thermal properties. Samples were grown by the Czochralski pulling technique. There were three types of samples: a pure crystal, the crystal doped with neodymium (4 at.% of Nd), and the third one doped with ytterbium (7 at.% of Yb). All samples were rectangular prisms with edges parallel to the axes of the optical indicatrix X, Y ,...

2014
F. E. Rougieux N. E. Grant D. Macdonald

In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several anne...

Journal: : 2023

The calculation of conductivity electron concentrations in n -GaSb at T = 295 K and 77 have been made. concentration “heavy” electrons the L-valley conduction band Т has shown to exceed “light” one Γ-valley. On contrary, are gathered Γ-valley.The results Hall measurements made on tellurium-doped samples n-GaSb obtained by Czochralski method represented. It that upon analysing data K, it is nece...

2008
D. Klimm

Crystal growth experiments (micro-pulling down or Czochralski methods, respectively) and DTA/TG measurements with Fe containing olivines (fayalite–forsterite solid solution) and with FeO (wustite) are performed. For both substances the oxygen partial pressure pO2 of the growth atmosphere had to be adjusted within the stability region of Fe 2+ for all temperatures ranging from room temperature t...

2011
Samuel Blahuta Aurélie Bessière Bruno Viana Vladimir Ouspenski Eric Mattmann Julien Lejay Didier Gourier

The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL) in Lu2(1-x)Y2xSiO₅ (LYSO) single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ), revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ) with increasing oxygen concentration in the growth atmosphere...

2018
Renqin Dou Qingli Zhang Jinyun Gao Yuanzhi Chen Shoujun Ding Fang Peng Wenpeng Liu Dunlu Sun

Rare-earth tantalates, with high density and monoclinic structure, and niobates with monoclinic structure have been paid great attention as potential optical materials. In the last decade, we focused on the crystal growth technology of rare-earth tantalates and niobates and studied their luminescence and physical properties. A series of rare-earth tantalates and niobates crystals have been grow...

2000
K. D. Liss A. Magerl J. R. Schneider

We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Ad/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature rang...

Journal: :Ferroelectrics 2023

Specific heat capacity measurements by differential scanning calorimetry (DSC) of single crystals solid solutions LiNbO3 and LiTaO3 are reported compared with corresponding ab initio calculations, the aim to investigate variation ferroelectric Curie temperature as a function composition. For this purpose, these were grown Czochralski pulling along c-axis. Elemental composition Nb Ta was investi...

Journal: :Journal of Crystal Growth 2021

This is the second part of a two-article series investigating presence an inverse response in measurement ingot radius Czochralski process for monocrystalline silicon production, when deduced from camera image bright ring at meniscus connecting solid crystal to melt. Such responses are known pose fundamental limitation achievable control performance. However, measurement, artefact technique and...

Journal: :TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B 2003

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