Vanadium sesquioxide V2O3, a transition metal oxide, is an important insulator due to its potential applications in novel electronic and memory devices. V2O3 thin films of thickness around 230 nm were grown on Si/SiO2/Ti/Pt substrates at deposition temperature 723 K controlled Ar:O2 atmosphere 35:2.5 sccm employing Direct Current (DC) magnetron sputtering. X-ray diffraction studies confirmed si...

We systematically study the oxidation properties of sputter-deposited TiB2.5 coatings up to 700 °C. Oxide-scale thickness dox increases linearly with time ta for 300, 400, 500, and °C, while an oxidation-protective behavior occurs dox=250?ta0.2 at 600 Oxide-layer’s structure changes from amorphous rutile/anatase-TiO2 temperatures ? 500 Abnormally low rate °C is attributed a highly dense columna...

CrBx thin films with 1.90 ? x 2.08 have been deposited by direct-current magnetron sputtering (DCMS) from a stoichiometric CrB2 target at 5 and 20 mTorr (0.67 2.67 Pa) Ar pressure onto sapphire (0001) substrates. All films, irrespective of deposition conditions, exhibit texture. Attesting to the achievement close-to-stoichiometric composition, epitaxial film growth is observed 900°C, while 500 ...