The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm and 0.5 mm) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/ cm for 0.06 mm diodes; 227 kV/cm for 0.5 mm diodes). The results of the X-ray measurements ...

In a hybrid IGBT module with SiC diodes as free-wheeling diodes, high frequency oscillation occurs during turn-on due to the fast switching transient of SiC diode and the resonance between circuit parasitic inductances and the junction capacitance of SiC diode. Such oscillation causes EMI noise which may affect the performance of the system. Methods to mitigate the turn-on oscillation are studi...

ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the It2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices a...

ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the It2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices a...

New diode structures without the field-oxide boundary across the p/n junction for ESD protection are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. The proposed N(P)MOSbounded diodes can provide more efficient ESD protection to ...

GaN-based Negative Differential Resistance (NDR) diode oscillators have been studied by employing Gunn design criteria applicable to this material system. Numerical simulations were used to carry out large-signal analysis of the GaN NDR diode oscillators in order to evaluate their potential for THz signal generation. It was found that, due to the higher electron velocity and reduced time consta...

Films of the polymer poly(4-dicyanomethylene-4H-cyclopenta[2,1-b:3,4-b’]dithiophene (PCDM) were electro-deposited onto indium tin oxide (ITO) coated glass substrates. The formation of a polymer was confirmed by the presence of an absorption band at ~900 nm (~1.4 eV) previously attributed to a * transition. Diodes formed by evaporating aluminium counterelectrodes onto the films displayed non-...

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The GERDA (GERmanium Detector Array) experiment aiming to search for the neutrinoless double beta decay (0νββ) of Ge at the Laboratori Nazionali Del Gran Sasso (LNGS), Italy, will operate bare enriched high-purity germanium (HPGe) detectors in liquid argon. GERDA Phase I will use the enriched diodes from the previous Heidelberg-Moscow (HdM) and IGEX experiments. With the HPGe detectors mounted ...

One of the most active research areas in the field of radar applications is the development of collisionavoidance systems (CAS) for automotive industry. The first prototypes of HEMT-based CAS chipsets operating at 77GHz have been recently demonstrated [1]. Such chipsets will greatly benefit from the addition of a monolithic transceiver switch, which would allow using a single antenna for both t...