نتایج جستجو برای: doping concentration

تعداد نتایج: 403896  

2013
M. Tohidi F. Z. Tohidi

Temperature and doping dependencies of electron mobility in InP semiconductor has been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low tempera...

2014
G. Juárez Díaz J. Martinez-Juarez P. López Salazar R. Peña-Sierra J. I. Contreras-Rascon J. Díaz-Reyes

This work report on the structural and electrical characteristics of zinc oxide single crystal samples doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of one and two hours under nitrogen environment from a solid source formed by antimony oxide. X-ray diffraction was used to determine the crystalline phases in samples and the structural change owi...

2014
Kevin P Musselman Sebastian Albert-Seifried Robert L Z Hoye Aditya Sadhanala David Muñoz-Rojas Judith L MacManus-Driscoll Richard H Friend

Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 1019 cm-3 to 1017 cm-3, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found ...

Journal: :Physical review letters 2000
Karpinska Cieplak Guha Malinowski Skoskiewicz Plesiewicz Berkowski Boyce Lemberger Lindenfeld

Measurements of the resistivity, magnetoresistance, and penetration depth were made on films of La1.85Sr0.15CuO4, with up to 12 at. % of Zn substituted for the Cu. The results show that the quadratic temperature dependence of the inverse square of the penetration depth, indicative of d-wave superconductivity, is not affected by doping. The suppression of superconductivity leads to a metallic no...

1995
KIKUO HARIGAYA

Exciton effects on conjugated polymers are investigated in the soliton lattice system. We use the Su-Schrieffer-Heeger model with long-range Coulomb interactions treated by the single-excitation configuration-interaction method. The soliton band is present in the Peierls gap of the doped system. There appears a new kind of the exciton where an electron-hole pair is excited between the soliton b...

2009
Calvin K. Chan Antoine Kahn

We demonstrate n-type doping of pentacene with the powerful reducing molecule decamethylcobaltocene (CoCp∗2). Characterization of pentacene films deposited in a background pressure of CoCp∗2 by X-ray photoemission spectroscopy and Rutherford backscattering confirm that the concentration of incorporated donor molecules can be controlled to a level as high as 1%. Ultraviolet photoemission spectro...

2013
Xian Chen Dengfeng Peng Feng Wang

Phase and size of lanthanide-doped nanoparticles are the most important characteristics that dictate optical properties of these nanoparticles and affect their technological applications. Herein, we present a systematic study to examine the effect of alkaline earth doping on the formation of NaYF₄ upconversion nanoparticles. We show that alkaline earth doping has a dual function of tuning parti...

2006
Xiangmei Duan Stefano Baroni Silvio Modesti Maria Peressi

We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on doping configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating doping regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic ...

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