This paper presents a W-band 2 2 focal-plane array (FPA) for passive millimeter-wave imaging in a standard 0.18 m SiGe BiCMOS process ( GHz). The FPA incorporates four Dicke-type receivers representing four imaging pixels. Each receiver employs the direct-conversion architecture consisting of an on-chip slot folded dipole antenna, an SPDT switch, a low noise amplifier, a single-balanced mixer, ...

This paper describes a low noise variable gain amplifier (LNA) and a mixer for a WCDMA frontend receiver based on a direct architecture in 0.18-μm CMOS. The LNA provides a 50Ω input impedance and utilizes a tuned load to provide high selectivity. The LNA achieves a maximum small signal gain of 16.8 dB and a minimum gain of 4.6 dB with good input return loss. In the high gain and the low gain mo...

Development of Millimeter Wave Integrated-Circuit Interferometric Sensors for Industrial Sensing Applications. (December 2004) Seoktae Kim, B.S., Inha University, S. Korea; M.S., Pohang University of Science and Technology, S. Korea Chair of Advisory Committee: Dr. Cam Nguyen New millimeter wave interferometric, multifunctional sensors have been studied for industrial sensing applications: disp...

With the increasing need for molecular reactions with small liquid volume in biomedical and chemical analyses, miniature mixers have captured considerable attention. Due to the nature of laminar flow in a millimeter-size and blow flow channel, mixing, or the molecular mass transfer in miniature mixers is usually dominated by molecular diffusion. The long diffusion time and mixing distance make ...

Mixing within the microdomain is limited because convective mixing cannot be achieved since diffusion dominates as the main form of transport. Hence microassays can take on the order of 1 to 72 h, without the aid of a passive or active mixer to shorten the time of transport of a target molecule to a probe (Lai et al., 2004). Liu et al. (2002, 2003) developed a low cost cavitation microstreaming...

A 200-280 GHz RF front-end of transmitter is demonstrated in 65-nm CMOS. Saturated EIRP is greater than -5dBm over a frequency range of 60GHz. When the input power is -20dBm, EIRP is greater than -10dBm for most of the frequency range, and achieves 3-dB and 6-dB bandwidths of 24% and 33%. The front-end was integrated with a fractional-N synthesizer to form a transmitter operating at 208-255GHz ...

In this study, the effect of molybdate on the electrochemical behavior and semi-conductive properties of duplex stainless steel 2205 passive film at NaCl solutions was investigated. Cyclic potentiodynamic polarization, impedance spectroscopy, mott-schottky plots and scanning electron microscopy (SEM) were used to study the passive behavior. Polarization curves showed that the corrosion current ...