Nanotransistors typically operate in far-fromequilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs)...

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangul...

Submitted for the MAR13 Meeting of The American Physical Society Floating Electrode Transistor based on Single-walled Carbon Nanotube Networks for High Source–drain Voltage Operation JEONGSU KIM, JUHYUNG LEE, HYUNGWOO LEE, TAEKYEONG KIM, HYE JUN JIN, JUYEON SHIN, Department of Physics and Astronomy, Seoul National University, YOUNGKI SHIN, SANGHO PARK, YOONHO KHANG, Process Development Group, S...

FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. In this paper different types of the po...

Detailed analysis of the 1/f low-frequency noise (LFN) in In0:52Al0:48As/InGaAs MODFET structures is performed, for low drain bias (below pinch-off voltage), in order to identify the physical origin and the location of the noise sources responsible for drain current fluctuations in the frequency range 0.1 Hz–105 Hz. Experimental data were analyzed with the support of a general modeling of the 1...

0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.09.033 ⇑ Corresponding author. Tel.: +91 11 24115580; fax E-mail addresses: [email protected] ( (R.S. Gupta). 1 Tel.: +91 11 24115580; fax: +91 11 24110606. In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT has been analyzed and compared with the corresponding performance o...

In this paper we look at the quantitative picture of fringing field efSects by use of high-k dielectrics on the 70 nm node CMOS technologies. By using Monte-Carlo based techniques, we extract the degradation in gate-to-channel capacitance and the internal, external fringing capacitance components for varying values of K. Our results clearly show the decrease in external fringing capacitance, in...

The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gat...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

A new side-contacted field effect diode (S-FED) structure has beenintroduced as a modified S-FED, which is composed of a diode and planar double gateMOSFET. In this paper, drain current of modified and conventional S-FEDs wereinvestigated in on-state and off-state. For the conventional S-FED, the potential barrierheight between the source and the channel is observed to b...