Some issues; leakage, tunneling currents, boron diffusion are threatening SiO2 to be used as a good gate dielectric for the future of the CMOS (complementary metal- oxide- semiconductor) transistors. For finding an alternative and novel gate dielectric, the NiO (Nickel oxide) and PVA (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural p...

Cross linking of high density polyethylene (HDPE) was first performed via high energy10 Mev electron beam (EB) irradiation. HDPE was also cross linked withDicumyle peroxide (DCP).The gel content of samples was determined by solvent extraction.Degree of cross linking was evaluated by hot set apparatus; as well .In order to clarify the effectof nature of cross linking, correlation of electrical p...

In this article, by using the method of finite difference time domain (FDTD) and PML boundary conditions, we have studied the photonic band gaps for TE and TM modes in square and triangular lattices consisting of air holes in dielectric medium and compared the results. In addition, the effect of nonlinearity of the photonic crystal background on the photonic band gaps and comparison with the re...

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for highK dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs....

Relaxing the assumption of an “infinite and homogenous background,” the dielectric response function of one-dimensional semiconducting nanowires embedded in a dielectric environment is calculated. It is shown that a high-κ (higher than semiconductor dielectric constant) dielectric environment reduces the screening by the free carriers inside the nanostructure, whereas a low dielectric constant ...