نتایج جستجو برای: edge dislocation
تعداد نتایج: 140216 فیلتر نتایج به سال:
Given any regularly varying dislocation measure, we identify a natural self-similar fragmentation tree as scaling limit of discrete fragmentation trees with unit edge lengths. As an application we obtain continuum random tree limits of Aldous’s beta-splitting models and Ford’s alpha models for phylogenetic trees. This confirms in a strong way that the whole trees grow at the same speed as the m...
The migration of dislocations affects many material properties including deformation, plasticity and electronic properties. In order to understand the mechanism of the motion of dislocations, both experimental and theoretical studies have been performed [1]. It is known that full dislocations such as edge or screw dislocations can dissociate into Shockley partial dislocations, which have higher...
Given any regularly varying dislocation measure, we identify a natural self-similar fragmentation tree as scaling limit of discrete fragmentation trees with unit edge lengths. As an application, we obtain continuum random tree limits of Aldous’s beta-splitting models and Ford’s alpha models for phylogenetic trees. This confirms in a strong way that the whole trees grow at the same speed as the ...
We consider the state of stress created by presence an edge dislocation at arbitrary position, in a wedge internal angle. A method for determining is demonstrarted and verified against finite element simulations. Furthermore, Mellin transform employed to ensure that free surfaces remain traction along their length.
Because of crystal symmetry, body centred cubic (BCC) metals have large differences in lattice friction between screw and edge dislocations, and manifest generally different mechanical behaviours from face centred cubic (FCC) metals. Although mechanical annealing (significant drop in stored dislocation density in response to applie...
The effect of uniaxial applied stress on dislocation networks present in the atomic surface layer of Au(111) was studied. The measurements were made using a novel instrument combining ultrahigh vacuum scanned-probe microscopy with an in-situ stress-strain testing machine. The technique provides microscopic information, up to atomic resolution, about the large scale plasticity of surface layers ...
This study focuses on the mechanisms of pipe diffusion and kinetic point defect along dislocation line in MgO. We developed a numerical approach, based atomic scale calculations use elasticity theory, to determine migration energies defects. The is then evaluated according on-lattice atomistic Monte Carlo algorithm informed by simulations. show that edge MgO behaves as strong sink for vacancies...
Scanning capacitance microscopy is used to characterize nanoscale, local electronic structure in nonpolar n-type GaN grown in the a-plane orientation using lateral epitaxial overgrowth LEO . Analysis of the bias dependence of the scanning capacitance image contrast observed reveals the presence of a linear, positively charged feature aligned along the 1̄100 direction, extending from an LEO windo...
The utility of the notion of generalized disclinations in materials science is discussed within the physical context of modeling interfacial and bulk line defects like defected grain and phase boundaries, dislocations and disclinations. The Burgers vector of a disclination dipole in linear elasticity is derived, clearly demonstrating the equivalence of its stress field to that of an edge disloc...
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